Methods of manufacturing a semiconductor device including a dielectric layer including zirconium
AssigneeSamsung Electronics Co., Ltd.
InventorsHan-Mei Choi, Kyoung-Ryul Yoon, Seung-Hwan Lee, Ki-Yeon Park, Sung-Tae Kim, Young-Sun Kim, Cha-Young Yoo
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Abstract
A method of manufacturing a semiconductor device can include forming a tunnel oxide layer on a substrate, forming a floating gate on the tunnel oxide layer and forming a dielectric layer pattern on the floating gate using an ALD process. The dielectric layer pattern can include a metal precursor that includes zirconium and an oxidant. A control gate can be formed on the dielectric layer pattern. The semiconductor device can include the dielectric layer pattern provided herein.
Claims15
A method of manufacturing a non-volatile memory cell comprising:
- forming a tunnel oxide layer pattern on a substrate;
- forming a floating gate on the tunnel oxide layer pattern;
- forming a dielectric layer pattern comprising a composite of multiple dielectric layers by forming
- a first thin film pattern on the floating gate using a first oxidant and a first metal precursor comprising zirconium;
- then
- forming a second thin film pattern on the first thin film pattern using a second oxidant and a second metal precursor comprising aluminum;
- and then
- repeating the sequence of said forming a first thin film pattern and forming a second thin film pattern at least twice;
- and
- forming a control gate on the dielectric layer pattern.
A method of manufacturing a non-volatile memory cell comprising:
- forming a tunnel oxide layer on a substrate;
- forming a first conductive layer on the tunnel oxide layer;
- forming a dielectric layer comprising a composite of multiple dielectric layers by:
- forming a first thin film on the first conductive layer using a first oxidant and a first metal precursor comprising zirconium,
- forming a second thin film on the first thin film using a second oxidant and a second metal precursor comprising aluminum;
- and
- repeating the sequence of said forming a first thin film pattern and forming a second thin film pattern at least twice;
- forming a second conductive layer on the dielectric layer;
- and
- etching the second conductive layer, the dielectric layer, the first conductive layer and the tunnel oxide layer to form a tunnel oxide layer pattern, a floating gate, a dielectric layer pattern comprising a multi layer thin film pattern and a control gate.
Dependencies are inferred from the claim text.