US 7,402,488 B2 · Method of manufacturing a semiconductor memory device

Abstract

A method of manufacturing a semiconductor memory device includes forming a carbon-containing layer on a semiconductor substrate, forming an insulating layer pattern on the carbon-containing layer, the insulating layer pattern partially exposing an upper surface of the carbon-containing layer, dry-etching the exposed portion of the carbon-containing layer, to form a carbon-containing layer pattern for defining a storage node hole, forming a bottom electrode inside the storage node hole, forming a dielectric layer on the bottom electrode inside the storage node hole, the dielectric layer covering the bottom electrode, and forming an upper electrode on the dielectric layer inside the storage node hole, the upper electrode covering the dielectric layer.

Claims49

Dependent claims

A method of manufacturing a semiconductor memory device, comprising:

forming a carbon-containing layer on a semiconductor substrate having a conductive region;
forming an insulating layer pattern on the carbon-containing layer, the insulating layer pattern defining a first hole, which partially exposes an upper surface of the carbon-containing layer;
dry-etching the carbon-containing layer exposed through the first hole, to form a carbon-containing layer pattern for defining a second hole exposing the conductive region of the semiconductor substrate;
forming a bottom electrode inside the first hole and the second hole;
removing the insulating layer pattern;
removing the carbon-containing layer pattern;
forming a dielectric layer on a resultant structure;
and
forming an upper electrode on the dielectric layer.

6 more elements

Dependencies are inferred from the claim text.

Method of manufacturing a semiconductor memory device

Life of this patent

Method of manufacturing a semiconductor memory device

Life of this patent

Abstract

Claims49