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US 7,402,484 B2Granted
Methods for forming a field effect transistor
AssigneeDongbu Electronics Co., Ltd.
InventorsHyunsoo Shin, Kyusung Kim
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Abstract
Methods for forming a field effect transistor are disclosed. An illustrated method comprises: forming a gate electrode on a substrate; and forming a nitride layer on at least a part of the gate electrode and the substrate.
Claims14
A method for forming a field effect transistor comprising:
- forming a gate electrode on a substrate;
- performing nitrogen ion implantation on the gate electrode and the substrate to form a nitride layer at top surfaces of the gate electrode and the substrate that expedites subsequent growth of an oxide;
- and
- after forming the nitride layer, forming a screen oxide layer on the nitride layer by an oxidation process.
1 more element
A method for forming a field effect transistor comprising:
- forming a gate electrode on a substrate;
- performing nitrogen ion implantation on the gate electrode and the substrate to form a nitride layer at top surfaces of the gate electrode and the substrate;
- after forming the nitride layer, forming a screen oxide layer on the nitride layer;
- forming a lightly doped drain region in the substrate;
- removing the screen oxide layer and the nitride layer;
- forming a spacer on a sidewall of the gate electrode;
- and
- forming a source/drain region in the substrate adjacent to the lightly doped drain region.
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Dependencies are inferred from the claim text.