US 7,402,477 B2 · Method of making a multiple crystal orientation semiconductor device

Abstract

A method of having transistors formed in enhanced performance crystal orientations begins with a wafer having a semiconductor substrate (12,52) of a first surface orientation, a thin etch stop layer (14,54) on the semiconductor substrate, a buried oxide layer (16,56) on the thin etch stop layer, and a semiconductor layer (18,58) of a second surface orientation on the buried oxide layer. An etch penetrates to the thin etch stop layer. Another etch, which is chosen to minimize the damage to the underlying semiconductor substrate, exposes a portion of the semiconductor substrate. An epitaxial semiconductor (28,66) is then grown from the exposed portion of the semiconductor substrate to form a semiconductor region having the first surface orientation and having few, if any, defects. The epitaxially grown semiconductor region is then used for enhancing one type of transistor while the semiconductor layer of the second surface orientation is used for enhancing a different type of transistor.

Claims16

Dependent claims

A method of making a semiconductor device structure, comprising:

providing a semiconductor substrate comprising:
a first semiconductor layer having a first surface orientation;
a first dielectric layer over the first semiconductor layer, wherein the first dielectric layer comprises a high K dielectric;
a second dielectric layer over the first dielectric layer;
and
a second semiconductor layer over the second dielectric layer, wherein the second semiconductor layer has a second surface orientation;
performing a patterned etch through the second semiconductor layer and the second dielectric layer to form an opening in the second semiconductor layer and the second dielectric layer, wherein:
the patterned etch is stopped on the first dielectric layer;
and
the patterned etch comprises a first etch type;
etching through the first dielectric layer to the first semiconductor layer using a second etch type whereby the first semiconductor layer has an exposed portion at the opening;
epitaxially growing a semiconductor region of the first surface orientation from the exposed portion into the opening;
forming a transistor of the first type in the semiconductor region;
forming a transistor of the second type in the second semiconductor layer.

11 more elements

Dependencies are inferred from the claim text.

Method of making a multiple crystal orientation semiconductor device

Life of this patent

Method of making a multiple crystal orientation semiconductor device

Life of this patent

Abstract

Claims16