Method of manufacturing a semiconductor device

A method of manufacturing a semiconductor device, comprising steps of:

• forming a semiconductor film over a substrate having an insulating surface;
• forming a patterned resist mask over said semiconductor film;
• patterning said semiconductor film to form at least one semiconductor island;
• removing the patterned resist mask located over said semiconductor island;
• spinning the substrate after removing the patterned resist mask;
• applying an etching solution to a surface of said semiconductor island and scattering the etching solution during said spinning, thereby contaminating impurities are removed from the surface of the semiconductor island by the step of applying the etching solution;
• forming a gate insulating film over said semiconductor island after the contaminating impurities are removed from the surface of the semiconductor island;
• spinning the substrate having the gate insulating film;
• applying an etching solution to a surface of said gate insulating film and scattering the etching solution during said spinning, thereby contaminating impurities are removed from the surface of the gate insulating film by the step of applying the etching solution;
• and then
• forming a gate electrode over said gate insulating film after the contaminating impurities are removed from the surface of the gate insulating film.

A method of manufacturing a semiconductor device, comprising steps of:

• forming a semiconductor film over a substrate having an insulating surface;
• crystallizing said semiconductor film;
• forming a patterned resist mask over said crystallized semiconductor film;
• patterning the crystallized semiconductor film to form at least one semiconductor island over said substrate;
• removing the patterned resist mask located over said semiconductor island;
• spinning the substrate after removing the patterned resist mask;
• applying an etching solution to a surface of said semiconductor island and scattering the etching solution during said spinning, thereby contaminating impurities are removed from the surface of the semiconductor island;
• and then
• forming a gate insulating film over said semiconductor island after the contaminating impurities are removed from the surfaces by the step of applying the etching solution;
• and
• forming a gate electrode over said gate insulating film.

A method of manufacturing a semiconductor device, comprising steps of:

• forming a gate wiring over a substrate having an insulating surface;
• spinning the substrate;
• applying an etching solution to surfaces of said substrate and said gate wiring and scattering the etching solution during said spinning, thereby contaminating impurities are removed from the surface of the wiring and the insulating surface by the step of applying the etching solution;
• and then
• forming a gate insulating film and a semiconductor film over said gate wiring after the contaminating impurities are removed from the surfaces.

A method of manufacturing a semiconductor device, comprising steps of:

• forming a gate wiring over a substrate having an insulating surface;
• spinning the substrate;
• applying an etching solution to surfaces of said substrate and said gate wiring and scattering the etching solution during said spinning, thereby contaminating impurities are removed from the surface of the wiring and the insulating surface by the step of applying the etching solution;
• and then
• forming a gate insulating film and a semiconductor film over said gate wiring, continuously after the contaminating impurities are removed from the surfaces.

A method of manufacturing a semiconductor device, comprising steps of:

• forming a semiconductor film over a substrate having an insulating surface;
• crystallizing said semiconductor film;
• forming a patterned resist mask over said crystallized semiconductor film;
• patterning the crystallized semiconductor film to form at least one semiconductor island over said substrate;
• removing the patterned resist mask located over said semiconductor island;
• spinning the substrate after removing the patterned resist mask;
• applying an etching solution to a surface of said semiconductor island and scattering the etching solution during said spinning, thereby contaminating impurities are removed from the surface of the semiconductor island;
• and then
• forming a gate insulating film over said semiconductor island after the contaminating impurities are removed from the surfaces by the step of applying the etching solution;
• spinning the substrate having the gate insulating film;
• applying an etching solution to a surface of said gate insulating film and scattering the etching solution during said spinning, thereby contaminating impurities are removed from the surface of the gate insulating film by the step of applying the etching solution;
• and then
• forming a gate electrode over said gate insulating film after the contaminating impurities are removed from the surface of the gate insulating film.