Method of fabricating single-crystal silicon film and method of fabricating TFT adopting the same
AssigneeSamsung Electronics Co., Ltd.
InventorsTakashi Noguchi, Wenxu Xianyu
Life of this patent
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Abstract
A method for forming a single-crystal silicon film of high quality is provided. The method includes the operations of: growing single-crystal silicon to a predetermined thickness of a crystal growth plate; depositing a buffer layer on the single-crystal silicon layer; forming a partition layer at a predetermined depth in the single-crystal silicon layer by implanting hydrogen ions in the single-crystal silicon layer from an upper portion of an insulating layer; attaching a substrate onto the buffer layer; and cutting the partition layer of the single-crystal silicon layer by heating the partition layer from the crystal growth plate to obtain a single-crystal silicon layer of a predetermined thickness on the substrate.
Claims8
A method of fabricating single-crystal silicon comprising the operations of:
- growing single-crystal silicon to a predetermined thickness on a crystal growth plate;
- depositing a buffer layer on the single-crystal silicon layer;
- forming a partition layer at a predetermined depth in the single-crystal silicon layer by implanting hydrogen ions in the single-crystal silicon layer from an upper portion of an insulating layer;
- attaching a substrate to the buffer layer;
- and
- cutting the partition layer of the single-crystal silicon layer by heating the partition layer from the crystal growth plate to obtain a single-crystal silicon layer of a predetermined thickness on the substrate.
A method of fabricating a single-crystal silicon thin film transistor (TFT) comprising the operations of:
- growing a single-crystal silicon to a predetermined thickness on a crystal growth plate;
- depositing a buffer layer on the single-crystal silicon layer;
- forming a partition layer at a predetermined depth in the single-crystal silicon layer by implanting hydrogen ions in the single-crystal silicon layer from an upper portion of an insulating layer;
- attaching a substrate onto the buffer layer;
- cutting the partition layer of the single-crystal silicon layer by heating the partition layer from the crystal growth plate to obtain a single-crystal silicon layer of a predetermined thickness on the substrate;
- and
- fabricating a single-crystal silicon TFT on the substrate using the single-crystal silicon layer formed on the substrate.
Dependencies are inferred from the claim text.