US 7,402,461 B2Granted

Method of connecting base materials

AssigneeFujitsu Limited

InventorsMasataka Mizukoshi, Nobuhiro Imaizumi, Taiji Sakai

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Abstract

The present invention is aimed at providing a method of connecting base materials capable of forming metal terminals having a uniform height and smooth surface with a low cost, and of realizing a low-damage mounting, in which a work is planarized while keeping the temperature of the insulating film, possibly elevated due to frictional heat generated during cutting using a cutting tool, lower than 80° C., and keeping the temperature range lower than 80° C. throughout the entire period of the cutting, the electrodes and electrodes are opposed and brought into contact at a temperature of 80° C. or above but lower than the curing temperature of the insulating film, the insulating film is liquefied and a space between the electrodes and electrodes is filled with an insulating resin composing the insulating film, and the insulating resin is cured at the curing temperature or above.

Claims12

Dependent claims

A method of connecting base materials comprising the steps of:

forming an insulating film on a first base material having a plurality of first electrodes formed on the surface thereof, so as to bury said first electrode using an insulating material which exhibits adhesive property at a first temperature or above;
planarizing the surface of said first electrode and the surface of said insulating film so as to produce a continuous flat surface, by cutting using a cutting tool, while keeping temperature of said insulating film lower than said first temperature;
and
opposing said first base material to a second base material having a plurality of second electrodes formed on the surface thereof so as to bring said first electrodes and said second electrodes into contact to thereby connect said first base material and said second base material via said insulating film, and to thereby produce solid phase diffusion layers of metals between said first electrodes and said second electrodes.

1 more element

Dependencies are inferred from the claim text.

Facts

Application: 11/019,157Filed 23 Dec 2004
Priority: JP 2004-10552931 Mar 2004
Published: US 2005/0227474 A113 Oct 2005
Granted: 22 Jul 2008
Term ends: Not estimatedThe source records don’t support an estimate.

Classification24 codes

H10W 72/20
Interconnections or connectors in packages: bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
H10W 72/013
Manufacture or treatment: of die-attach connectors
H10W 74/012
Manufacture or treatment: of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
H10W 74/131
Characterised by their shape or disposition: the semiconductor body being only partially enclosed