PCMO thin film with memory resistance properties
AssigneeSharp Laboratories of America, Inc.
InventorsWei-Wei Zhuang, Tingkai Li, Sheng Teng Hsu, Fengyan Zhang
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Abstract
A method is provided for forming a Pr0.3Ca0.7MnO3 (PCMO) thin film with crystalline structure-related memory resistance properties. The method comprises: forming a PCMO thin film with a first crystalline structure; and, changing the resistance state of the PCMO film using pulse polarities responsive to the first crystalline structure. In one aspect the first crystalline structure is either amorphous or a weak-crystalline. Then, the resistance state of the PCMO film is changed in response to unipolar pulses. In another aspect, the PCMO thin film has either a polycrystalline structure. Then, the resistance state of the PCMO film changes in response to bipolar pulses.
Claims12
A method for forming a Pr0.3Ca0.7MnO3 (PCMO) thin film with crystalline structure-related memory resistance properties, the method comprising:
- depositing a PCMO thin film using a deposition process selected from a group consisting of a metal organic chemical vapor deposition (MOCVD) process, spin-coating, and MOCVD followed by spin-coating:
- forming a PCMO thin film with a first crystalline structure selected from a group including amorphous, weak-crystalline, and polycrystalline;
- and,
- changing the resistance state of the PCMO film using pulse polarities responsive to the first crystalline structure.
A method for forming a Pr0.3Ca0.7MnO3 (PCMO) thin film with crystalline structure-related memory resistance properties, the method comprising:
- using a deposition process selected from a group consisting of a metal organic chemical vapor deposition (MOCVD) process, spin-coating, and MOCVD followed by spin-coating, forming a PCMO thin film with a crystalline structure;
- in response to a PCMO crystalline structure selected from the group consisting of amorphous and weak-crystalline, using a unipolar pulse to change PCMO resistance states;
- and,
- in response to a PCMO polycrystalline structure, using a bipolar pulse to change PCMO resistance states.
Dependencies are inferred from the claim text.