Gate oxide film structure for a solid state image pick-up device
AssigneeFUJIFILM Corporation
InventorsEiichi Okamoto, Shunsuke Tanaka, Shinji Uya
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Abstract
In a solid-state image pick-up device in which a photoelectric converting section formed on a semiconductor substrate and a gate oxide film of a transfer path of a charge coupled device (CCD) which is close to the photoelectric converting section are constituted by a laminated film comprising a silicon oxide film (SiO) and a silicon nitride film (SiN), the gas oxide film has a single layer structure in which at least an end on the photoelectric converting section side of the gate oxide film does not contain the silicon nitride film.
Claims10
A method of manufacturing a solid-state image pick-up device, comprising the steps of:
- forming a gate oxide film having a lamination structure including at least a silicon nitride film and a silicon oxide film on an insulating film of a surface of a semiconductor substrate;
- forming a charge transfer electrode on the gate oxide film;
- etching the gate oxide film by using the charge transfer electrode as a mask;
- and
- carrying out etching on an etching condition that an etching selective ratio of the silicon nitride film to the silicon oxide film is high, thereby selectively removing an end of the silicon nitride film.
A method of manufacturing a solid-state image pick-up device, comprising the steps of:
- forming a gate oxide film having a lamination structure including at least a silicon nitride film and a silicon oxide film on an insulating film of a surface of a semiconductor substrate;
- forming a charge transfer electrode having a sidewall on the gate oxide film;
- etching the gate oxide film to form a gate oxide film sidewall adjacent the charge transfer electrode sidewall;
- and
- etching the gate oxide film sidewall to form an opening in the silicon nitride layer extending beneath the charge transfer electrode.
Dependencies are inferred from the claim text.