Solid-state image pickup device
AssigneeSony Corporation
InventorsTakayuki Ezaki, Teruo Hirayama
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Abstract
A solid-state image pickup device 1 according to the present invention includes a semiconductor substrate 2 on which a pixel 20 composed of a photodiode 3 and a transistor is formed. The transistor comprising the pixel 20 is formed on the surface of the semiconductor substrate, a pn junction portion formed between high concentration regions of the photodiode 3 is provided within the semiconductor substrate 2 and a part of the pn junction portion of the photodiode 3 is extended to a lower portion of the transistor formed on the surface of the semiconductor substrate 2. According to the present invention, there is provided a solid-state image pickup device in which a pixel size can be microminiaturized without lowering a saturated electric charge amount (Qs) and sensitivity.
Claims6
A method for manufacturing solid-state image pickup device comprising:
- forming a pixel comprised of a photodiode and a transistor;
- and
- wherein forming the photodiode includes forming a pn junction portion comprised of high concentration first type and second type semiconductor regions within a semiconductor material and wherein a part of said pn junction portion of said photodiode extends to a lower portion of said transistor formed at a surface of said semiconductor material;
- and
- forming a vertical groove in a semiconductor material depth direction which reaches an inside portion of said high concentration impurity region.
Dependencies are inferred from the claim text.