Semiconductor laser device and method for fabricating the same
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorToshikazu Onishi
Life of this patent
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Abstract
A semiconductor laser device according to the present invention has a semiconductor substrate, an active layer formed on the semiconductor substrate and made of a compound semiconductor containing phosphorus, a guide layer formed on the active layer and made of a compound semiconductor a dopant diffusion preventing layer formed on the guide layer and made of a semiconductor compound containing arsenic, and a clad layer formed on the dopant diffusion preventing layer and made of a compound semiconductor containing a dopant.
Claims3
A method for fabricating a semiconductor laser device, the method comprising the steps of:
- (a) successively depositing, on a semiconductor substrate, an active layer made of a compound semiconductor containing phosphorus and a guide layer made of a compound semiconductor;
- (b) after the step (a), depositing, on the substrate, a dopant diffusion preventing layer made of a compound semiconductor containing arsenic;
- and
- (c) after the step (b), depositing, on the substrate, a first clad layer made of a compound semiconductor containing a dopant;
- (d) after the step (c), depositing, on the substrate, a current block layer made of a compound semiconductor;
- (e) forming an opening configured as a stripe in the current block layer;
- and (f) depositing, on the substrate, a second clad layer made of a compound semiconductor containing a dopant.
A method for fabricating a semiconductor laser device, the method comprising the steps of:
- (a) successively depositing, on a semiconductor substrate, an active layer made of a compound semiconductor containing phosphorus and a guide layer made of a compound semiconductor;
- (b) depositing, on the substrate, a dopant diffusion preventing layer made of a compound semiconductor containing arsenic;
- (c) depositing, on the substrate, a first clad layer made of a compound semiconductor containing a dopant;
- (d) after the step (c), successively depositing, on the substrate, an etching stop layer, a second clad layer made of a compound semiconductor containing a dopant, and a cap layer;
- (g) forming, on the cap layer, a mask having an opening;
- (h) removing, by using the mask, respective regions of the second clad layer and the cap layer located within the opening to expose the etching stop layer in the opening;
- and
- (i) forming, on the substrate, a current block layer made of a compound semiconductor.
A method for fabricating a semiconductor laser device, the method comprising the steps of:
- (a) successively depositing, on a semiconductor substrate, an active layer made of a compound semiconductor containing phosphorus and a guide layer made of a compound semiconductor;
- (b) depositing, on the substrate, a dopant diffusion preventing layer made of a compound semiconductor containing arsenic;
- (c) depositing, on the substrate, a first clad layer made of a compound semiconductor containing a dopant;
- (k) after the step (c), forming, on the substrate, a first mask having a first opening;
- (l) forming, by using the first mask, a first region from which the respective regions of the dopant diffusion preventing layer and the first clad layer located within the first opening have been removed and a second region in which the dopant diffusion preventing layer and the first clad layer are deposited;
- (m) depositing, on the substrate, the first clad layer again and further successively depositing an etching stop layer, a second clad layer made of a compound semiconductor containing a dopant, and a cap layer;
- (n) forming a mask for dopant diffusion on the second region of the substrate and performing a thermal treatment;
- (o) removing the mask for dopant diffusion and then forming a second mask having an opening extending crosswise over the first and second regions of the substrate;
- (p) removing, by using the second mask, the regions of the second clad layer and the cap layer located within the second opening to expose the etching stop layer in the second opening;
- and
- (q) forming, on the substrate, a current block layer made of a compound semiconductor.
Dependencies are inferred from the claim text.