Back to results
US 7,402,444 B2Granted
Method and apparatus for manufacturing a semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsYoshimasa Kawase, Hiroshi Itokawa
Life of this patent
Estimating the term…
Abstract
A method of manufacturing a semiconductor device using a wafer emissivity calculated from a wafer reflectivity to calculate a wafer temperature and to calculate target values for heat source optical intensities provided to a plurality of heat sources which heat the wafer and a substrate peripheral structure.
Claims20
A method of manufacturing a semiconductor device by processing a wafer, comprising:
- measuring a reflectivity of a substrate peripheral structure before heating, the substrate peripheral structure being placed close to the wafer and being heated simultaneously with the wafer by a plurality of heat sources;
- measuring a wafer reflectivity of the wafer before the heating;
- calculating a wafer emissivity of the wafer from the wafer reflectivity;
- measuring a wafer radiation intensity of radiation emitted from the wafer during the heating;
- calculating a wafer temperature of the wafer from the wafer emissivity and the wafer radiation intensity;
- calculating a target value of on-wafer optical intensity on the wafer so that the wafer temperature becomes a preset temperature;
- calculating a target value of optical intensity on the substrate peripheral structure from a difference between the reflectivity of the substrate peripheral structure and the wafer reflectivity so that incident light being incident on the substrate peripheral structure and wafer incident light being incident on the wafer have an equal optical intensity;
- calculating target values of heat source optical intensity for heating by the heat sources so that the target value of on-wafer optical intensity and the target value of optical intensity of the substrate peripheral structure are achieved;
- calculating target values of heat source power so that the target values of heat source optical intensity are achieved;
- and
- inputting the target values of heat source power to the plurality of heat sources and causing the heat sources to emit light.
8 more elements
A method of manufacturing a semiconductor device by processing a wafer, the wafer being simultaneously heated by a plurality of upside heat sources placed at a frontside of the wafer and by a plurality of downside heat sources placed at a backside of the wafer, the method comprising:
- measuring a central reflectivity of a central portion of the backside of the wafer and a reflectivity of an outer peripheral portion of the backside before the heating;
- calculating a central emissivity of the wafer from the central reflectivity;
- measuring a central radiation intensity of radiation emitted from the central portion during the heating;
- calculating a central temperature of the central portion from the central emissivity and the central radiation intensity;
- calculating a target value of central optical intensity on the central portion so that the central temperature becomes a preset temperature;
- calculating a target value of optical intensity on the outer peripheral portion from a difference between the reflectivity of the outer peripheral portion and the central reflectivity so that incident light being incident on the outer peripheral portion and central incident light being incident on the central portion have an equal optical intensity;
- calculating a plurality of target values of downside heat source optical intensity for heating by the plurality of downside heat sources, respectively, so that the target value of central optical intensity and the target value of outer peripheral optical intensity are achieved;
- calculating a plurality of target values of upside heat source optical intensity for heating by the plurality of upside heat sources, respectively, so that the plurality of target values of downside heat source optical intensity have a smaller difference;
- calculating target values of downside heat source power so that the target values of downside heat source optical intensity are achieved;
- calculating target values of upside heat source power so that the target values of upside heat source optical intensity are achieved;
- inputting the target values of downside heat source power to the plurality of downside heat sources and causing the downside heat sources to emit light;
- and
- inputting the target values of upside heat source power to the plurality of upside heat sources and causing the upside heat sources to emit light.
10 more elements
An apparatus for manufacturing a semiconductor device comprising:
- a plurality of heat sources which emit light with an inputted heat source power and heating a uniform heating temperature region including a wafer;
- an input unit which inputs reflectivity at a plurality of positions in the uniform heating temperature region, the reflectivity being measured before the heating;
- an emissivity calculation unit which calculates emissivity of the uniform heating temperature region from the reflectivity;
- an optical intensity measuring unit which measures radiation intensity of radiation emitted from the uniform heating temperature region during the heating;
- a temperature calculation unit which calculates a heating temperature of the uniform heating temperature region from the emissivity and the radiation intensity;
- an optical intensity calculation unit which calculates a target value of on-region optical intensity on the uniform heating temperature region so that the heating temperature becomes a preset temperature;
- a correction unit which corrects the target value of on-region optical intensity using a difference in reflectivity among the plurality of positions so that incident light being incident on the uniform heating temperature region has a uniform optical intensity;
- an optical intensity calculation unit which calculates a target value of optical intensity for heating by the plurality of heat sources so that the target value of on-region optical intensity is achieved;
- a power calculation unit which calculates a target value of heat source power so that the target value of heat source optical intensity is achieved;
- and
- a power supply unit which supplies heat source power at the target value of heat source power to the lamps.
8 more elements
Dependencies are inferred from the claim text.