Chemical-mechanical polishing methods
AssigneeMicron Technology, Inc.
InventorMichael T. Andreas
Life of this patent
Estimating the term…
Abstract
A chemical-mechanical polishing (CMP) method includes applying a solid abrasive material to a substrate, polishing the substrate, flocculating at least a portion of the abrasive material, and removing at least a majority portion of the flocculated portion from the substrate. Applying solid abrasive material can include applying a CMP slurry or a polishing pad comprising abrasive material. Such a method can further include applying a surfactant comprising material to the substrate to assist in effectuating flocculation of the abrasive material. Such surfactant comprising material may be cationic which includes, for example, a quaternary ammonium substituted salt. Also, for example, the surfactant comprising material may be applied during polishing, brush scrubbing, pressure spraying, or buffing.
Claims19
A CMP method comprising
- applying a CMP slurry containing substantially dispersed, solid abrasive material to a substrate;
- applying to the substrate a surfactant containing material that exhibits the characteristic of decreasing a settling time for the abrasive material in an aqueous dilution of the slurry by complexing between at least a portion of the abrasive material and the surfactant to form floccule and flocculating at least a majority portion of the abrasive material with the surfactant;
- and
- removing at least some of the abrasive material.
A CMP method comprising
- applying a CMP slurry containing substantially dispersed, solid abrasive material to a substrate;
- applying to the substrate a surfactant containing material, the surfactant exhibiting a one-hour settling rate constant of greater than 0.035 for the abrasive material in an aqueous mixture of about 0.1 weight percent surfactant and about 1 weight percent slurry complexing between at least a portion of the abrasive material and the surfactant to form floccule;
- and
- flocculating at least a majority portion of the abrasive material with the surfactant and removing at least some of the abrasive material.
A CMP method comprising:
- applying a CMP slurry containing a solid, ceria-comprising abrasive material to a substrate;
- polishing the substrate with the abrasive material;
- applying to the substrate a quaternary ammonium substituted salt surfactant containing material that exhibits the characteristic of decreasing a settling time for the abrasive material in an aqueous dilution of the slurry;
- flocculating and complexing the abrasive material with the surfactant;
- and
- removing at least a majority portion of the abrasive material.
A CMP method comprising:
- applying a CMP slurry containing substantially dispersed, solid abrasive ceria to a substrate;
- applying to the substrate a surfactant containing material that exhibits the characteristic of decreasing a settling time for the abrasive ceria in an aqueous dilution of the slurry by complexing between at least a portion of the abrasive ceria and the surfactant to form floccule;
- and
- removing at least some of the floccule containing abrasive ceria.
Dependencies are inferred from the claim text.