Fixed-abrasive chemical-mechanical planarization of titanium nitride

A method of fabricating a semiconductor die comprising:

• providing a substrate;
• and
• forming an integrated circuit supported by the substrate, the integrated circuit having a titanium nitride layer, wherein the titanium nitride layer is planarized by a method comprising:
• abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a planarizing solution, wherein the planarizing solution is an aqueous solution comprising ascorbic acid as an etchant, approximately 1% to 5% by weight of oxalic acid, and approximately 2% to 10% by weight of ammonium acetate.

A method of fabricating a semiconductor die comprising:

• providing a substrate;
• and
• forming an integrated circuit supported by the substrate, the integrated circuit having a titanium nitride layer, wherein the titanium nitride layer is planarized by a method comprising:
• abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fix-abrasive planarizing pad and a planarizing solution, the planarizing solution including an etchant and a buffer in aqueous solution, the etchant having ascorbic acid as an etchant and at least one etching agent from the group consisting of oxalic acid and phosphoric acid, the planarizing solution being less than approximately 10% by weight of the buffer.

A method of fabricating a semiconductor die comprising:

• providing a substrate;
• and
• forming an integrated circuit supported by the substrate, the integrated circuit having a titanium nitride layer, wherein the titanium nitride layer is planarized by a method comprising:
• abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fixed-abrasive planarizing pad and a planarizing solution, the planarizing solution including an etchant and a buffer in aqueous solution, the etchant having ascorbic acid as an etchant and at least one etching agent from the group consisting of oxalic acid and phosphoric acid, the planarizing solution being approximately 1% to 5% by weight of the etchant and approximately 0% to 10% by weight of the buffer.

A method of fabricating a semiconductor die, comprising:

• providing a substrate;
• and
• forming an integrated circuit supported by the substrate, the integrated circuit having a titanium nitride layer, wherein the titanium nitride layer is planarizing by a method comprising:
• abrading the titanium nitride layer with a planarizing surface of a planarizing medium including a fix-abrasive planarizing pad and a planarizing solution including ascorbic acid as an etchant, the planarizing solution being an etchant solution without substantially including an agent to operate as an oxidizing agent.