Orientated group IV-VI semiconductor structure, and method for making and using the same
AssigneeThe Board of Regents of the University of Oklahoma
InventorZhisheng Shi
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Abstract
A method of growing and fabricating a group IV-VI semiconductor structure, for use in fabricating devices. In one embodiment, the group IV-VI semiconductor structure produced by the method of the present invention includes a group IV-VI material grown on a selected orientation of [110]. The devices fabricated can be a laser, detector, solar cell, thermal electrical cooling devices, etc. A laser device produced according to the present method will have a low threshold due to the lift-off of the energy degeneracy and low defect density. Growth on the [110] orientation also allows epitaxial growth of the semiconductor structure on a dissimilar substrate, which could improve the thermal dissipation and thus increase the operating temperature of the laser device.
Claims21
A laser device, comprising:
- a substrate having a growing surface with a [110] orientation;
- and
- a semiconductor structure having a [110] orientation comprising a group IV-VI material epitaxially grown on the growing surface of the substrate such that the orientation of the group IV-VI material substantially follows the [110] orientation of the growing surface of the substrate,
- wherein the substrate comprises:
- a base layer constructed of a fluoride material;
- a bottom contact layer constructed of a semiconductor material, the bottom contact layer being disposed on the base layer;
- and
- a bottom electrical and optical confinement layer disposed on the bottom contact layer, the bottom electrical optical confinement layer providing the growing surface on which the semiconductor structure having a [110] orientation is grown.
Dependencies are inferred from the claim text.