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US 7,399,716 B2Granted
Precursor for hafnium oxide layer and method for forming hafnium oxide film using the precursor
AssigneeSamsung Electronics Co., Ltd.
InventorsJung-hyun Lee, Yo-sep Min, Young-jin Cho
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Abstract
A hafnium oxide precursor and a method for forming a hafnium oxide layer using the precursor are provided. The hafnium oxide precursor contains a nitrogen compound bound to HfCl4.
Claims7
A method for forming a hafnium oxide layer, comprising:
- preparing a solution of a hafnium oxide precursor containing a nitrogen compound bound to HfCI4;
- adsorbing the hafnium oxide precursor solution onto a surface of a substrate in a reactor;
- and
- oxidizing the product adsorbed on the surface of the substrate by supplying an oxidizing agent into the reactor, to form an atomic hafnium oxide layer on the substrate.
1 more element
Dependencies are inferred from the claim text.