Surface-emitting type semiconductor laser
AssigneeSeiko Epson Corporation
InventorMasamitsu Mochizuki
Life of this patent
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Abstract
A surface-emitting type semiconductor laser includes: a first mirror; an active layer formed above the first mirror; a second mirror formed above the active layer; and a current constricting section formed above or below the active layer, wherein the second mirror has a plurality of concave sections arranged within a plane perpendicular to a light emission direction, and a light confining region surrounded by the concave sections is formed inside a region surrounded by the current constricting section as viewed in a plan view.
Claims8
A surface-emitting type semiconductor laser comprising:
- a first mirror;
- an active layer formed above the first mirror;
- a second mirror formed above the active layer;
- a current constricting section formed above or below the active layer,
- the second mirror having a plurality of concave sections arranged within a plane perpendicular to a light emission direction;
- a depth of each of the plurality of concave sections being smaller than the thickness of the second mirror;
- a light confining region surrounded by the concave sections being formed inside a region surrounded by the current constricting section as viewed in a plan view;
- and
- a dielectric mirror formed above the second mirror, a lowermost layer of the dielectric mirror being embedded in the concave sections.
A surface-emitting type semiconductor laser comprising:
- a first mirror;
- an active layer formed above the first mirror;
- a second mirror formed above the active layer;
- a current constricting section formed above or below the active layer,
- the second mirror having a plurality of concave sections arranged within a plane perpendicular to a light emission direction;
- a light confining region surrounded by the concave sections being formed inside a region surrounded by the current constricting section as viewed in a plan view;
- and
- a first columnar section formed from at least the active layer, the second mirror and the current constricting section,
- the first columnar section including a third columnar section having the active layer and the current constricting section and a second columnar section formed above the third columnar section, and an electrode formed on a top surface of the third columnar section and around the second columnar section.
A surface-emitting type semiconductor laser comprising:
- a first mirror;
- an active layer formed above the first mirror;
- a second mirror formed above the active layer;
- a current constricting section formed above or below the active layer,
- the second mirror having a plurality of concave sections arranged within a plane perpendicular to a light emission direction;
- a light confining region surrounded by the concave sections being formed inside a region surrounded by the current constricting section as viewed in a plan view;
- and
- a heat radiation film formed above the second mirror.
A surface-emitting type semiconductor laser comprising:
- a first mirror;
- an active layer formed above the first mirror;
- a second mirror formed above the active layer;
- a current constricting section formed above or below the active layer,
- the second mirror having a plurality of concave sections arranged within a plane perpendicular to a light emission direction;
- a light confining region surrounded by the concave sections being formed inside a region surrounded by the current constricting section as viewed in a plan view;
- a conductive film formed on an entire surface above the second mirror;
- a first heat radiation film formed above the conductive film;
- and
- a second heat radiation film formed above the first heat radiation film,
- the conductive film functioning as an electrode for driving the surface-emitting type semiconductor laser, and the second heat radiation film being composed of a conductive material and being electrically connected to the conductive film.
Dependencies are inferred from the claim text.