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US 7,397,830 B2Granted
Semiconductor laser device
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorsKenzo Ishibashi, Katsumi Gotoh, Takatoshi Yukimasa, Makoto Ichinose
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Abstract
A semiconductor laser device according to the present invention includes a mechanism section having a semiconductor laser, a first frame for holding the mechanism section and radiating heat generated in the mechanism section, a control section for controlling the mechanism section, a second frame for holding the control section and radiating heat generated in the control section, and a coupling section for insulatively coupling the first frame to the second frame.
Claims17
A semiconductor laser device comprising:
- a mechanism section including a semiconductor laser;
- a first frame for holding the mechanism section and radiating heat generated in the mechanism section;
- a control section for controlling the mechanism section;
- a second frame for holding the control section and radiating heat generated in the control section;
- and
- a coupling section having a low thermal conductivity, for insulatively coupling the first frame to the second frame.
3 more elements
Dependencies are inferred from the claim text.