Nonvolatile semiconductor memory device which stores multivalue data
AssigneeKabushiki Kaisha Toshiba
InventorsYasuhiko Honda, Masao Kuriyama
Life of this patent
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Abstract
A reference current generating circuit generates at least one reference current. A voltage generating circuit generates voltage. A sense amplifier compares a current caused to flow in a memory cell according to the voltage supplied from the voltage generating circuit with the reference current supplied from the reference current generating circuit. A control section is supplied with an output signal of the sense amplifier. When verifying the threshold voltage of the memory cell, the control section causes the voltage generating circuit to generate verify voltage which is the same as readout voltage generated at the time of data readout from the memory cell.
Claims6
A semiconductor memory device comprising:
- memory cells, wherein each of the memory cells includes a control gate;
- a reference current generating circuit configured to generate at least one reference current;
- a voltage generating circuit configured to generate a voltage supplied to the control gate of each of the memory cells;
- a sense amplifier which compares a current caused to flow in the memory cell according to the voltage supplied from the voltage generating circuit with the reference current supplied from the reference current generating circuit;
- and
- a control section supplied with an output signal of the sense amplifier,
- wherein the control section causes the voltage generating circuit to generate a verify voltage which is the same as a readout voltage generated at the time of data readout from the memory cell when the threshold voltage of the memory cell is verified.
Dependencies are inferred from the claim text.