Flash memory device and program method thereof
AssigneeSamsung Electronics Co., Ltd.
InventorSang-Pil Sim
Life of this patent
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Abstract
A method of programming a plurality of memory cells in a flash memory device from a first state to a second state includes verifying the plurality of memory cells using a verify voltage having a level increased according to an increase in a program loop number; and programming the plurality of memory cells using a program voltage having an increment decreased according to an increase in the program loop number, wherein the verifying and programming steps constitute a program loop, the program loop being terminated at a point in time when a level of the verify voltage reaches to a voltage range of the second state.
Claims12
A method of programming a plurality of memory cells in a flash memory device from a first state to a second state, comprising:
- verifying the plurality of memory cells using a verify voltage having a level increased according to an increase in a program loop number;
- and
- programming the plurality of memory cells using a program voltage having an increment decreased according to the increase in the program loop number,
- wherein the verifying and programming steps constitute a program loop, the program loop being terminated at a point in time when a level of the verify voltage reaches to a voltage range of the second state.
A flash memory device comprising:
- a cell array including a plurality of memory cells;
- a program voltage generator for generating a program voltage to supply the program voltage to the cell array, the program voltage having an increment gradually decreased according to an increase in a program loop number;
- a verify voltage generator for generating a verify voltage to supply the verify voltage to the cell array, the verify voltage having a level increased according to an increase in the program loop number;
- and
- a program control part for controlling the program and verify voltage generators so as to program the plurality of memory cells from a first state to a second state based on the verify and program voltages, during a program operation.
Dependencies are inferred from the claim text.