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US 7,397,694 B2Granted
Magnetic memory arrays
AssigneeIndustrial Technology Research Institute
InventorsChi-Ming Chen, Chien-Chung Hung, Young-Shying Chen, Lien-Chang Wang
Life of this patent
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Abstract
A magnetic memory array. A first bit line provides a first writing magnetic field to a magnetic memory cell. A second bit line provides a second writing magnetic field to a reference magnetic memory cell. A word line provides a third writing magnetic field to the magnetic memory cell and a fourth writing magnetic field to the reference magnetic memory cell. The third writing magnetic field exceeds the fourth writing magnetic field.
Claims10
A magnetic memory array, comprising:
- a magnetic memory cell comprising a first free ferromagnetic layer, a first pinned ferromagnetic layer, and a first tunnel barrier layer located between the first free ferromagnetic layer and the first pinned ferromagnetic layer;
- a reference magnetic memory cell comprising a second free ferromagnetic layer, a second pinned ferromagnetic layer, and a second tunnel barrier layer located between the second free ferromagnetic layer and the second pinned ferromagnetic layer;
- a first bit line providing a first writing magnetic field to the magnetic memory cell;
- a second bit line providing a second writing magnetic field to the reference magnetic memory cell;
- and
- a word line providing a third writing magnetic field to the magnetic memory cell and a fourth writing magnetic field to the reference magnetic memory cell, wherein the third writing magnetic field exceeds the fourth writing magnetic field.
3 more elements
Dependencies are inferred from the claim text.