US 7,397,638 B2 · Magnetoresistive sensor having an in stack bias structure with NiFeCr spacer layer for improved bias layer pinning

Abstract

A magnetoresistive sensor having an in stack bias structure for biasing the magnetic moment of the free layer. The in stack bias structure includes a magnetic bias layer that may include a layer of NiFe and a layer of CoFe. A layer of antiferromagnetic material (AFM layer) is exchange coupled with the bias layer. Preferably, the NiFe layer of the bias layer is located adjacent to the AFM layer. A non-magnetic spacer layer is sandwiched between the free layer and the bias layer. The spacer layer comprises NiFeCr and is of such a thickness that magnetostatic coupling between the free layer and the bias layer across the spacer layer biases the magnetic moment of the free layer in a direction antiparallel to the magnetic moment of the bias layer. The NiFeCr promotes a desired crystalline growth in the bias layer that causes excellent exchange coupling between the bias layer and the AFM layer.

Claims20

Dependent claims

A magnetoresistive sensor, comprising:

magnetic free layer;
a magnetic pinned layer;
a first non-magnetic layer sandwiched between the pinned layer and the free layer;
an in stack magnetic bias layer;
a layer of antiferromagnetic material exchange coupled with the in stack bias layer;
and
a second non-magnetic layer sandwiched between the in stack bias layer and the free layer, the second non-magnetic layer comprising NiFeCr;
wherein
the second non-magnetic layer has a Cr content of about 40 atomic percent.

6 more elements

Dependencies are inferred from the claim text.

Magnetoresistive sensor having an in stack bias structure with NiFeCr spacer layer for improved bias layer pinning

Life of this patent

Magnetoresistive sensor having an in stack bias structure with NiFeCr spacer layer for improved bias layer pinning

Life of this patent

Abstract

Claims20