Circuits including parallel conduction paths and methods of operating an electronic device including parallel conduction paths

A method of operating an electronic device comprising an array of first electronic components, wherein:

• each of the first electronic components is a radiation-emitting electronic component or a radiation-responsive electronic component;
• for each first electronic component, a first terminal of the first electronic component is connected to first terminals of at least two parallel conduction paths within a driving unit, including a first conduction pat and a second conduction path;
• the first conduction path comprises a first field-effect transistor comprising a first source/drain region, a second source/drain region, and a gate electrode, wherein the first and second source/drain regions of the first field-effect transistor are connected to the first conduction path;
• the second conduction path comprises a second field-effect transistor comprising a first source/drain region, a second source/drain region, and a gate electrode, wherein the first and second source/drain regions of the second field-effect transistor are connected to the second conduction path;
• wherein the method comprises:
• collecting first data regarding first signals sent to the gate electrodes of the first field-effect transistors during a first time period, wherein the first signals correspond to a first image;
• accessing a length of the first time period;
• determining first voltage-time products, wherein for each first field-effect transistor:
• each of the first voltage-time products is the length of the first time period times a first voltage difference for one of the first field-effect transistors;
• and
• the first voltage difference far the each first field-effect transistor is a voltage on the gate electrode of the first field-effect transistor minus a voltage on the first source/drain region of the first field-effect transistor, the second source/drain region of the first field-effect transistor, or both;
• accessing a length of a second time period;
• and
• determining second values of second signals that are to be sent to the gate electrodes of the first field-effect transistors during the second time period, wherein the second signals correspond to first threshold voltage recovery signals.