Method and apparatus for statistical CMOS device characterization
AssigneeInternational Business Machines Corporation
InventorsKanak B. Agarwal, Jerry D. Hayes, Ying Liu
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AssigneeInternational Business Machines Corporation
InventorsKanak B. Agarwal, Jerry D. Hayes, Ying Liu
Estimating the term…
A unified test structure having a large number of electronic devices under test is used to characterize both capacitance-voltage parameters (C-V) and current-voltage parameters (I-V) of the devices. The devices are arranged in an array of columnns and rows, and selected by control logic which gates input/output pins that act variously as current sources, sinks, clamps, measurement ports and sense lines. The capacitance-voltage parameter is measured by taking baseline and excited current measurements for different excitation voltage frequencies, calculating current differences between the baseline and excited current measurements, and generating a linear relationship between the current differences and the different frequencies. The capacitance is then derived by dividing a slope of a line representing the linear relationship by the excitation voltage. Different electronic devices may be so tested, including transistors and interconnect structures.
A method of testing an electronic device in an integrated circuit, the electronic device having a plurality of nodes, comprising:
Dependencies are inferred from the claim text.