Semiconductor device and method of manufacturing the same
AssigneesSanyo Electric Co., Ltd., Kanto Sanyo Semiconductors Co., Ltd.
InventorsHirotoshi Kubo, Yukari Shirahata, Shigehito Matsumoto, Masamichi Yamamuro, Koujiro Kameyama, Mitsuo Umemoto
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Abstract
Disclosed is a semiconductor device in which emitter pad electrodes connected to an active region, collector and base pad electrodes are formed on a surface of a semiconductor substrate. Furthermore, on a back surface of the semiconductor substrate, a backside electrode is formed. Moreover, the emitter pad electrodes connected to a grounding potential are connected to the backside electrode through feedthrough electrodes penetrating the semiconductor substrate in a thickness direction.
Claims5
A semiconductor device, comprising:
- a semiconductor substrate including a front surface, a back surface and four lateral faces, which connect a periphery of the front surface and a periphery of the back surface;
- a diffusion region in the semiconductor substrate;
- a pad electrode on the front surface of the semiconductor substrate, which is electrically connected to the diffusion region;
- a backside electrode on the back surface of the semiconductor substrate;
- a through-hole penetrating through the semiconductor substrate and located under the pad electrode;
- a feedthrough electrode, which electrically connects the pad electrode and the backside electrode through the semiconductor substrate and which is formed of a conductive material covering an inner wall of the through-hole or filled in the through-hole, and wherein
- the diffusion region is surrounded by an isolation region;
- the pad electrode is outside of the isolation region;
- and
- the diffusion region and the pad electrode are connected through a wiring.
Dependencies are inferred from the claim text.