Bonding and probing pad structures
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsLiang-Chen Lin, Pei-Haw Tsao
Life of this patent
Estimating the term…
Abstract
A pad structure includes a first metal-containing layer formed over a substrate. A first passivation layer is formed over the first metal-containing layer. The first passivation layer has a first opening partially exposing the first metal-containing layer. A pad layer is formed over the first passivation layer, covering the first opening. The pad layer includes a probing region configured to be contacted by a probe and a bonding region configured to have a wired bonded to it. The probing region contacts the first metal-containing layer through the first opening, and the bonding region overlies a portion of the first passivation layer.
Claims17
A pad structure, comprising:
- a first metal-containing layer formed over a substrate;
- a first passivation layer formed over the first metal-containing layer, the first passivation layer having a first opening partially exposing the first metal-containing layer;
- and
- a pad layer formed over the first passivation layer and covering the first opening, the pad layer comprising a probing region configured to be contacted by a probe and a bonding region configured to have a wire bonded thereto, wherein the probing region contacts the first metal-containing layer through the first opening, and the bonding region overlies a portion of the first passivation layer;
- and
- a conductive structure formed through the first passivation layer, connecting the bonding region and the first metal-containing layer.
A pad structure, comprising:
- a first metal-containing layer formed over a substrate, the first metal-containing layer comprising a circuit pattern;
- a second metal-containing layer formed adjacent to and over the first metal-containing layer;
- a first passivation layer formed over the second metal-containing layer, the first passivation layer having a first opening partially exposing the second metal-containing layer;
- a pad layer formed over the first passivation layer and covering the first opening, the pad layer comprising a probing region and a bonding region, the bonding region overlying a portion of the first passivation layer, and
- a conductive structure formed through the first passivation layer, connecting the bonding region and the second metal-containing layer;
- wherein the probing region contacts the second metal-containing layer through the first opening;
- and
- the circuit pattern is routed under the bonding region;
- and
- a second passivation layer is formed over the first passivation layer, the second passivation layer comprising a second opening exposing the probing region and the bonding region.
A pad structure, comprising:
- a first metal-containing layer disposed over a substrate;
- a first passivation layer disposed over the first metal-containing layer, the first passivation layer having a first opening partially exposing the first metal-containing layer;
- and
- a pad layer disposed over the first passivation layer, the pad layer covering the first opening, the pad layer further comprising a probing region and a bonding region;
- and
- a conductive structure disposed through the first passivation layer, the conductive structure connecting the bonding region and the first metal-containing layer
- wherein the probing region contacts the first metal-containing layer through the first opening, and the entire bonding region overlies a portion of the first passivation layer.
Dependencies are inferred from the claim text.