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US 7,397,126 B2Granted
Semiconductor device
AssigneeNEC Electronics Corporation
InventorTomoki Kato
Life of this patent
Estimating the term…
Abstract
The present invention provides inhibiting an electrical leakage caused by anion migration. A trenched portion 15 is provided as ion migration-preventing zone between a source electrode 4 and a gate electrode 5. The trenched portion 15 is formed so as to surround a periphery of the source electrode 4.
Claims15
A semiconductor device, comprising:
- a first electrode;
- a second electrode adjacent to said first electrode;
- and
- an insulator cover film covering a part of said first electrode and formed between said first electrode and said second electrode, said insulator cover film including a trench that forms a ring surrounding said first electrode and has two trench side walls, each of said two trench side walls having a portion that is substantially perpendicular to a direction extending from said first electrode to said second electrode.
1 more element
A semiconductor device, comprising:
- a semiconductor chip;
- a plurality of electrodes provided on a surface of said semiconductor chip;
- and
- an ion migration-inhibiting zone provided between an electrode in a side of higher potential and an electrode in a side of lower electric potential among said plurality of electrodes, said electrodes being mutually adjacent,
- wherein said ion migration-inhibiting zone comprises a wall that is substantially perpendicular to a direction extending from the higher potential electrode to the lower potential electrode, and
- wherein said wall is formed by an insulator having a trenched portion provided therein between said electrode in the side of higher potential and said electrode in the side of lower potential, the region having said trenched portion comprising said ion migration-preventing zone, said wall of said trenched portion further comprising an overhanging geometry.
3 more elements
Dependencies are inferred from the claim text.