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US 7,397,125 B2Granted
Semiconductor device with bonding pad support structure
AssigneeNEC Electronics Corporation
InventorNoriaki Oda
Life of this patent
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Abstract
A semiconductor device having bonding pads on a semiconductor substrate includes: an upper copper layer that is formed on the lower surface of the bonding pads with a barrier metal interposed and that has a copper area ratio that is greater than layers in which circuit interconnects are formed; and a lower copper layer that is electrically insulated from the upper copper layer and that is formed closer to the semiconductor substrate than the upper copper layer.
Claims21
A semiconductor device, comprising:
- a bonding pad on a semiconductor substrate;
- an upper copper layer on a lower surface of said bonding pad with a barrier metal interposed;
- and
- a lower copper layer closer to said semiconductor substrate than said upper copper layer;
- wherein a copper area ratio of said lower copper layer under said bonding pad is lower than that of said upper copper layer, and
- wherein said lower copper layer is not electrically connected to said upper copper layer under said bonding pad.
3 more elements
A semiconductor device comprising:
- a bonding region in which a bonding pad is formed;
- an internal circuit region provided inside of said bonding region, said internal circuit region having a multilevel wiring structure that includes a plurality of copper interconnect layers at a first level and a plurality of copper interconnect layers at second level;
- and
- an upper copper layer formed in said bonding region above said internal circuit region and under said bonding pad in electrical contact therewith, said upper copper layer being electrically isolated from said internal circuit region.
1 more element
Dependencies are inferred from the claim text.