Process of metal interconnects
AssigneeUnited Microelectronics Corp.
InventorsShao-Chung Hu, Yu-Ru Yang, Chien-Chung Huang
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Abstract
A process of metal interconnects and a structure of metal interconnect produced therefrom are provided. An opening is formed in a dielectric layer. A metal layer is formed over the dielectric layer filling the opening. A film layer is formed on the metal layer and the dielectric layer. The film layer is reacted with the metal layer during a thermal process, and a protective layer is formed on the surface of the metal layer. The portion of the film layer not reacted with the metal layer is removed to avoid short between the metal layers. The protective layer can protect the surface of the metal layer from being oxidized and thus the stability and the reliability of the semiconductor device can be effectively promoted.
Claims14
A process of forming metal interconnects, comprising:
- forming a first opening in a first dielectric layer;
- filling a first metal layer in the first opening;
- forming a first film layer on the first dielectric layer and the first metal layer;
- performing a thermal process to induce a reaction between the first metal layer and the first film layer to form a first protective layer on the surface of the first metal layer;
- and
- removing an unreacted portion of the first film layer.
Dependencies are inferred from the claim text.