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US 7,397,119 B2Granted
Wafer-level diamond spreader
AssigneeIntel Corporation
InventorsGregory M. Chrysler, Chuan Hu
Life of this patent
Estimating the term…
Abstract
An embodiment of the present invention is a technique to heat spread at wafer level. A silicon wafer is thinned. A chemical vapor deposition diamond (CVDD) wafer processed. The CVDD wafer is bonded to the thinned silicon wafer to form a bonded wafer. Metallization is plated on back side of the CVDD wafer. The CVDD wafer is reflowed to flatten the back side.
Claims20
A die assembly comprising:
- a die having a die backside;
- a thermal interface layer on the die backside;
- and
- a chemical vapor deposition diamond (CVDD) spreader having a CVDD backside, the CVDD spreader being bonded to the die via the thermal interface layer;
- wherein the thermal interface layer comprises:
- a CVDD flat side metal layer deposited on the CVDD spreader, and
- a die backside metal layer deposited on the die backside, the die backside metal layer and the CVDD flat side metal layer having matched coefficients of thermal expansion (CTEs) and being bonded together.
4 more elements
A device comprising:
- a package substrate having interconnection elements;
- and
- a die assembly attached to the package substrate via a plurality of bumps, the die assembly comprising:
- a die having a die backside,
- a thermal interface layer on the die backside, and
- a chemical vapor deposition diamond (CVDD) spreader having a CVDD backside, the CVDD spreader being bonded to the die via the thermal interface layer;
- wherein the thermal interface layer comprises:
- a CVDD flat side metal layer deposited on the CVDD spreader, and
- a die backside metal layer deposited on the die backside, the die backside metal layer and the CVDD flat side metal layer having matched coefficients of thermal expansion (CTEs) and being bonded together.
6 more elements
Dependencies are inferred from the claim text.