Semiconductor integrated circuit device and a method of manufacturing the same

A semiconductor integrated circuit device comprising:

• a first active region having a substantially elliptical shape having a long axis and a short axis, a semiconductor element formed in said first active region, a gate electrode which extends in a direction which is parallel to said short axis of said first active region and across said first active region, a second active region being adjacent to said first active region in said direction which is parallel to the short side of said first active region and a shallow groove isolation formed between said first active region and said second active region:
• wherein a peripheral portion of said first active region is shaped in a form of a section that is rounded by round processing using a sidewall spacer as a mask;
• wherein a sum of a size of the short axis of said first active region and a width of a space defined between said first active region and said second active region, in said direction which is parallel to the short axis of said first active region, constitutes a minimum pitch;
• wherein one-half of said minimum pitch is a minimum processing size determined according to a resolution limit of a photolithograihic process used to form the semiconductor integrated circuit device, and
• wherein the size of the short axis of said first active region after removal of said sidewall spacer is set larger than one-half of said minimum pitch.