Junction barrier schottky with low forward drop and improved reverse block voltage

A junction barrier Schottky device comprising:

• a first semiconductor layer of a first conductivity type and a second semiconductor layer disposed above and having a lower impurity concentration of said first conductivity type than said first semiconductor layer;
• a first diffusion region of said first conductivity type having a higher impurities concentration than said impurity concentration of the second semiconductor layer, for functioning as a forward barrier height reduction region;
• a second diffusion region of a second conductivity type disposed adjacent to said first diffusion region for functioning as a backward blocking enhancement region and said first and second diffusion regions disposed above said second semiconductor layer;
• and
• a terminal semiconductor region of said first conductivity disposed above said second semiconductor layer, and having a lower impurity concentration than said second semiconductor layer wherein said terminal semiconductor region disposed near a terminal edge in said junction barrier Schottky device.