Using sense lines to thermally control the state of an MRAM
AssigneeSamsung Electronics Co., Ltd.
InventorsJanice H. Nickel, Manuj Bhattacharyya, Robert G. Walmsley
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Abstract
An aspect of the present invention is an MRAM device. The MRAM device includes a plurality of magnetic memory elements, a sense line coupled to the plurality of magnetic memory elements for sensing a magnetic orientation of each of the plurality of magnetic memory elements wherein the sense line includes a first via and a second via and wherein the sense line is utilized to thermally assist in switching a magnetic orientation of at least one of the plurality of magnetic memory elements.
Claims12
A magnetic random access memory device comprising:
- a plurality of magnetic memory elements;
- a sense line coupled to the plurality of magnetic memory elements for sensing a magnetic orientation of at least one of the plurality of magnetic memory elements, the sense line including a first via and a second via;
- wherein the sense line is utilized to thermally assist in switching a magnetic orientation of the at least one of the plurality of magnetic memory elements by providing a current from the first via to the second via;
- and
- a current source coupled to the sense line wherein the current source provides the current from the first via to the second via.
The device of 8 wherein the only one write conductor is positioned orthogonal to the sense line.
Dependencies are inferred from the claim text.