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US 7,397,092 B2Granted
Phase changable memory device structures
AssigneeSamsung Electronics Co., Ltd.
InventorsHideki Horii, Suk-Ho Joo, Ji-Hye Yi
Life of this patent
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Abstract
A phase-changeable memory device may include a substrate, an insulating layer on the substrate, first and second electrodes, and a pattern of a phase-changeable material between the first and second electrodes. More particularly, the insulating layer may have a hole therein, and the first electrode may be in the hole in the insulating layer. Moreover, portions of the second electrode may extend beyond an edge of the pattern of phase-changeable material. Related methods are also discussed.
Claims24
A phase-changeable memory device comprising:
- a substrate;
- an insulating layer on the substrate, the insulating layer having a hole therein;
- a first electrode in the hole in the insulating layer;
- a pattern of a phase-changeable material on the first electrode;
- and
- a second electrode on the layer of the phase-changeable material such that the pattern of the phase-changeable material is between the first and second electrodes, wherein portions of the second electrode extend beyond an edge of the pattern of phase-changeable material wherein a void is defined between the portions of the second electrode extending beyond the edge of the pattern of the phase-changeable material and the insulating layer.
3 more elements
A phase-changeable memory device comprising:
- a substrate;
- an insulating layer on the substrate, the insulating layer having a hole therein;
- a first electrode in the hole in the insulating layer;
- a pattern of a phase-changeable material on the first electrode;
- and
- a second electrode on the layer of the phase-changeable material such that the pattern of the phase-changeable material is between the first and second electrodes, wherein portions of the second electrode extend beyond an edge of the pattern of phase-changeable material wherein the pattern of the phase-changeable material extends beyond the first electrode onto surface portions of the insulating layer that are parallel with respect to a surface of the substrate so that portions of the pattern of the phase-changeable material directly on the insulating layer are parallel with respect to a surface of the substrate.
3 more elements
A phase-changeable memory device comprising:
- a substrate;
- a first insulating layer on the substrate, the first insulating layer having a hole therein;
- a first electrode in the hole in the first insulating layer
- a pattern of a phase-changeable material on the first electrode;
- a second electrode on the layer of the phase-changeable material such that the pattern of the phase-changeable material is between the first and second electrodes, wherein portions of the second electrode extend beyond an edge of the pattern of phase-changeable material;
- a protective insulating layer on sidewalls of the pattern of phase-changeable material, on exposed surfaces of the second electrode including on a surface of the second electrode opposite the substrate, and on the first insulating layer;
- and
- a second insulating layer on the protective insulating layer so that the protective insulating layer is between the second insulating layer and the second electrode and so that the protective insulating layer is between the second insulating layer and the first insulating layer.
5 more elements
A phase-changeable memory device comprising:
- a substrate;
- an insulating layer on the substrate, the insulating layer having a hole therein;
- a first electrode in the hole in the insulating layer;
- a pattern of a phase-changeable material on the first electrode;
- a second electrode on the layer of the phase-changeable material such that the pattern of the phase-changeable material is between the first and second electrodes, wherein portions of the second electrode extend beyond an edge of the pattern of phase-changeable material;
- and
- a memory cell transistor included in the substrate, the memory cell transistor including spaced apart source/drain regions and a gate electrode therebetween, wherein the first electrode is electrically coupled with one of the source/drain regions of the memory cell transistor.
4 more elements
A phase-changeable memory device comprising:
- a substrate;
- first and second patterns of a phase-changeable material spaced apart on the substrate;
- first and second electrodes on the respective first and second patterns of the phase-changeable material, wherein the first pattern of the phase-changeable material is between the substrate and the first electrode and the second pattern of the phase-changeable material is between the substrate and the second electrode;
- and
- an upper insulating layer on the substrate between the first and second patterns of the phase-changeable material and on the first and second electrodes, wherein the first electrode is between the upper insulating layer and the first pattern of the phase-changeable material, wherein the second electrode is between the upper insulating layer and the second pattern of the phase-changeable material, and wherein a void is between the first and second patterns of the phase-changeable material.
2 more elements
Dependencies are inferred from the claim text.