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US 7,397,087 B2Granted
FEOL/MEOL metal resistor for high end CMOS
AssigneeInternational Business Machines Corporation
InventorsAnil K. Chinthakindi, Douglas D. Coolbaugh, Vidhya Ramachandran, Robert M. Rassel
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Abstract
A FEOL/MEOL metal resistor that has tight sheet resistance tolerance (on the order of about 5% or less), high current density (on the order of about 0.5 mA/micron or greater), lower parasitics than diffused resistors and lower TCR than standard BEOL metal resistors as well as various methods of integrating such a metal resistor structure into a CMOS technology are provided.
Claims8
A semiconductor IC structure comprising:
- a semiconductor substrate;
- a shallow trench isolation region located in said semiconductor substrate;
- at least one front-end-of-the-line (FEOL) device located on a surface of said semiconductor substrate;
- an etch stop layer located directly on said shallow trench isolation region;
- a metal resistor comprising at least a conductive metal and located directly on and above said etch stop layer;
- a dielectric material portion located directly on and above said metal resistor, wherein first sidewalls of said metal resistor and second sidewalls of said dielectric material portion are vertically coincident and said first sidewalls are directly adjoined to and located directly above said second sidewalls;
- and
- a first level of metallization located above said metal resistor.
5 more elements
Dependencies are inferred from the claim text.