Top-gate thin-film transistor
AssigneeXerox Corporation
InventorsYiliang Wu, Beng S. Ong, Paul F. Smith
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Abstract
A thin-film transistor, such as a top-gate thin-film transistor, is provided herein. The thin-film transistor has a performance-enhancing layer, such as a performance-enhancing bottom layer, comprising a polymer other than a polyimide. In specific embodiments, the polymer is selected from the group consisting of polysiloxane, polysilsesquioxane, and mixtures thereof. In other embodiments, it is a self-assembling polymeric monolayer of a silane agent and an organophosphonic acid. The performance-enhancing layer directly contacts the substrate. The layer improves the carrier mobility and current on/off ratio of the thin film transistor.
Claims7
A top-gate thin film transistor comprising, in sequence:
- a substrate having functional groups on its surface;
- a performance-enhancing bottom layer;
- a semiconductor layer;
- and
- a dielectric layer;
- wherein the performance-enhancing bottom layer is positioned between the substrate and the semiconductor layer;
- and,
- wherein the performance-enhancing bottom layer is a self-assembling monolayer formed from a precursor having the following formula:
- X—Y
- wherein X is a group that is reactive with the functional groups on the substrate surface, and Y is a linear or branched hydrocarbon or heteroatom-containing group having 1 to about 60 carbon atoms or from 1 to about 30 carbon atoms;
- and
- wherein X is selected from the groups consisting of —PO3H3, —SiCl3, —SiCl(CH3)2, and —SiCl2CH3.
Dependencies are inferred from the claim text.