Back to results
US 7,397,084 B2Granted
Semiconductor device having enhanced performance and method
AssigneesSemiconductor Components Industries, LLC, HVVI Seminconductors, Inc.
InventorsGary H. Loechelt, Robert B. Davies, David H. Lutz
Life of this patent
Estimating the term…
Abstract
In one embodiment, a semiconductor device is formed in a body of semiconductor material. The semiconductor device includes a localized region of doping near a portion of a channel region where current exits during operation.
Claims16
A semiconductor device, comprising:
- a semiconductor material having a major surface, wherein the semiconductor material comprises a first conductivity type;
- a control electrode formed in spaced relationship with the semiconductor material;
- a body region of a second conductivity type formed in the major surface adjacent the control electrode, wherein a portion of the body region forms a channel region when the semiconductor device is in operation;
- a source region of the first conductivity type formed in the body region;
- and
- a localized region of doping of the first conductivity type formed in the semiconductor material in proximity to a drain edge of the channel region, wherein the localized region of doping is confined both vertically and horizontally adjacent the major surface, and wherein the localized region of doping has a dopant concentration at least five times greater than a dopant concentration of a portion of the semiconductor material, and wherein the portion of the semiconductor material is adjacent the major surface and adjacent to the localized region of doping.
3 more elements
A semiconductor device, comprising:
- a semiconductor substrate having a first layer of a first conductivity type and having a major surface;
- a body region of a second conductivity type disposed in the first layer for forming a channel of the semiconductor device;
- a source region of the first conductivity type formed in the body region;
- a gate structure formed over the major surface adjacent the channel;
- and
- a current spreading region formed in a first portion of the first layer and abutting a drain end of the channel, wherein the current spreading region comprises the first conductivity type, and wherein the current spreading region is localized and confined both vertically and horizontally adjacent the major surface, and wherein the current spreading region has a dopant concentration at least five times greater than that of the first layer, and wherein a second portion of the first layer is adjacent the major surface, and wherein the current spreading region is between the body region and the second portion of the first layer.
3 more elements
Dependencies are inferred from the claim text.