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US 7,397,080 B2Granted
Non-volatile memory
AssigneePowerchip Semiconductor Corp.
InventorsWei-Zhe Wong, Ching-Sung Yang
Life of this patent
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Abstract
A non-volatile memory including at least a substrate, a memory cell and source/drain regions is provided. The memory cell is disposed on the substrate and includes at least a first memory unit and a second memory unit. Wherein, the first memory unit, from the substrate up, includes a floating gate and a first control gate. The second memory unit is disposed on a sidewall of the first memory unit and includes a charge trapping layer and a second control gate. The two source/drain regions are disposed in the substrate at both sides of the memory cell.
Claims9
A non-volatile memory, comprising:
- a substrate;
- a memory cell, disposed on the substrate, comprising:
- a first memory unit, from the substrate up, comprising at least a floating gate for storing charges and a first control gate;
- a second memory unit, disposed at one side of the first memory unit, and the second memory unit from the substrate up, comprising a charge tapping structure for storing charges and a second control gate;
- and
- a source/drain region, disposed in the substrate at both sides of the memory cell, wherein the first memory unit is adjacent to the second memory unit, and which are separated by the charge trapping structure.
3 more elements
Dependencies are inferred from the claim text.