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US 7,397,079 B2Granted
Non-volatile memory device and methods of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorsYong-Suk Choi, Seung-Beom Yoon, Yong-Tae Kim, Jin-Woo Kim
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Abstract
A non-volatile memory device includes a control gate electrode disposed on a substrate with a first insulation layer interposed therebetween and a floating gate disposed in a hole exposing substrate through the control gate electrode and the first insulation layer. A second insulation layer is interposed between the floating gate and the substrate, and between the floating gate and the control gate.
Claims20
A non-volatile memory device comprising:
- a control gate electrode disposed on a substrate with a first insulation layer interposed therebetween;
- a floating gate disposed in a hole exposing the substrate through the control gate electrode and the first insulation layer;
- and
- a second insulation layer interposed between the floating gate and the substrate and between the floating gate and the control gate.
1 more element
A method of fabricating a non-volatile memory device, comprising:
- sequentially forming a first insulation layer and a control gate conductive layer on a substrate;
- forming a hole to expose a predetermined region of the substrate through the control gate conductive layer and the first insulation layer;
- forming a floating gate with a second insulation layer interposed therebetween to fill the hole;
- and
- patterning the control gate conductive layer to form a control gate electrode including the floating gate.
2 more elements
Dependencies are inferred from the claim text.