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US 7,397,075 B2Granted
Method and apparatus providing CMOS imager device pixel with transistor having lower threshold voltage than other imager device transistors
AssigneeMicron Technology, Inc.
InventorHoward E. Rhodes
Life of this patent
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Abstract
A transistor of a pixel cell for use in a CMOS imager with a low threshold voltage of about 0.3 V to less than about 0.7 V is disclosed. The transistor is provided with high dosage source and drain regions around the gate electrode and with the halo implanted regions and/or the lightly doped LDD regions and/or the enhancement implanted regions omitted from at least one side of the gate electrode. The low threshold transistor is electrically connected to a high voltage transistor with a high threshold voltage of about 0.7 V.
Claims28
A pixel sensor cell comprising:
- at least one transistor formed on a semiconductor substrate of a first conductivity type, said at least one transistor having a threshold voltage lower than the threshold voltage of another transistor of said pixel sensor;
- and
- a first gate structure of said at least one transistor, said first gate structure being spaced apart from a second gate structure of said another transistor, and implanted regions provided on opposite sides of said second gate structure, but not on at least one side of said first gate structure.
A pixel sensor cell comprising:
- a first gate structure of a first transistor formed on a substrate of a first conductivity type, said first gate structure being spaced apart from a second gate structure of a second transistor formed on said substrate;
- lightly doped drain regions of a second conductivity type provided on opposite sides of said second gate structure, but not on at least one side of said first gate structure;
- and
- source and drain regions of said second conductivity type provided on opposite sides of said first and second gate structures.
1 more element
Dependencies are inferred from the claim text.