Self-aligned transistor

A contact structure for a transistor comprising:

• a semiconductor substrate having a first surface;
• a first doped region on the first surface;
• a second doped region on the first surface and electrically contacting the first doped region;
• a first conductor having a second surface overlying the first doped region, the first conductor having a sidewall;
• and
• a second conductor underlying a portion of the first conductor and extending from the second surface to electrically contact the first doped region wherein the second conductor is not on the sidewall of the first conductor an alignment spacer that is substantially coplanar to the sidewall of the first conductor wherein the sidewall of the first conductor is substantially perpendicular to the first surface, wherein the alignment spacer has an opening overlying the second doped region.