Semiconductor display device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Jun Koyama
Life of this patent
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Abstract
To provide a semiconductor display device capable of displaying an image having clarity and a desired color, even when the speed of deterioration of an EL layer is influenced by its environment. Display pixels and sensor pixels of an EL display each have an EL element, and the sensor pixels each have a diode. The luminance of the EL elements of each in the display pixels is controlled in accordance with the amount of electric current flowing in each of the diodes.
Claims24
A method for manufacturing a semiconductor device comprising:
- forming a first transistor in a display pixel;
- forming a second transistor in a sensor pixel;
- forming a light receiving diode over the second transistor with a first insulating film interposed therebetween;
- forming a second insulating film over the first transistor, the second transistor and the light receiving diode;
- and
- forming a display EL element electrically connected to the first transistor and a sensor EL element electrically connected to the second transistor, both formed over the second insulating film.
A method for manufacturing a semiconductor device comprising:
- forming a first transistor in a display pixel;
- forming a second transistor in a sensor pixel;
- forming a light receiving diode over the second transistor with a first insulating film interposed therebetween, wherein the light receiving diode includes an anode, a channel forming region and a cathode in an active layer;
- forming a second insulating film over the first transistor, the second transistor and the light receiving diode;
- and
- forming a display EL element electrically connected to the first transistor and a sensor EL element electrically connected to the second transistor, both formed over the second insulating film.
A method for manufacturing a semiconductor device comprising:
- forming a first transistor in a display pixel;
- forming a second transistor in a sensor pixel;
- forming a light receiving diode over the second transistor with a first insulating film interposed therebetween;
- forming a second insulating film over the first transistor, the second transistor and the light receiving diode;
- and
- forming a display EL element electrically connected to the first transistor and a sensor EL element electrically connected to the second transistor, both formed over the second insulating film, wherein the sensor EL element overlaps the light receiving diode.
A method for manufacturing a semiconductor device comprising:
- forming a first transistor in a display pixel;
- forming a second transistor in a sensor pixel;
- forming a light receiving diode over the second transistor with a first insulating film interposed therebetween, wherein the light receiving diode includes an anode, a channel forming region and a cathode in an active layer;
- forming a second insulating film over the first transistor, the second transistor and the light receiving diode;
- and
- forming a display EL element electrically connected to the first transistor and a sensor EL element electrically connected to the second transistor, both formed over the second insulating film, wherein the sensor EL element overlaps the light receiving diode.
Dependencies are inferred from the claim text.