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US 7,397,063 B2Granted
Semiconductor device
AssigneeMitsubishi Denki Kabushiki Kaisha
InventorsYasuyoshi Itoh, Kaoru Motonami
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Abstract
A semiconductor device comprises a glass substrate serving as a substrate having an insulated surface and a silicon layer located on a position overlapping with this glass substrate. The silicon layer includes an amorphous gettering region. Preferably, the silicon layer includes a main region serving as an active element region, and the gettering region is preferably included in the remaining portion of the silicon layer excluding the main region. Preferably, the silicon layer may include a portion serving as an active region of a thin-film transistor.
Claims7
A semiconductor device comprising:
- a substrate having an insulated surface with an insulating film thereon;
- and
- a silicon layer located on a position overlapping with said insulated surface and having a thickness orthogonal to the insulated surface;
- wherein
- said silicon layer includes an amorphous gettering region in contact with the insulating film, the gettering region having a thickness less than the thickness of the silicon layer;
- and wherein
- said silicon layer includes a main region serving as an active element region, and
- said gettering region is exclusive of said main region, the main region separated from the insulating film by the gettering region.
5 more elements
Dependencies are inferred from the claim text.