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US 7,397,061 B2Granted
Lateral phase change memory
AssigneeIntel Corporation
InventorBrian G. Johnson
Life of this patent
Estimating the term…
Abstract
A lateral phase change cell may be formed over a semiconductor substrate. The lateral cell, in some embodiments, may be exposed to light so that the same cell may be addressed by both optical and electrical signals.
Claims14
A memory comprising:
- a pair of parallel plate, horizontally spaced electrodes;
- and
- a phase change material between said pair of horizontally spaced electrodes, wherein said spaced electrodes sandwich the phase change material, one of said spaced electrodes being shorter than the other of said electrodes, an optically transmissive material contacting the shorter of said spaced electrodes and said phase change material, wherein said phase change material is sandwiched laterally between parallel plate, horizontally spaced electrodes.
A system comprising:
- a controller;
- a wireless interface coupled to said controller, and
- a semiconductor memory coupled to said device, said memory including a substantially planar surface, a pair of horizontally spaced electrodes, formed on said surface, a phase change material, a light transmissive chalcogenide material over said phase change material, said electrodes sandwiching said phase change material.
A memory comprising:
- a pair of horizontally spaced electrodes;
- and
- a phase change material between said pair of horizontally spaced electrodes, wherein said spaced electrodes sandwich the phase change material, one of said spaced electrodes, being shorter than the other of said electrodes, an optically transmissive material contacting the shorter of said spaced electrodes and said phase change material.
Dependencies are inferred from the claim text.