Method and apparatus for specimen fabrication
AssigneeHitachi, Ltd.
InventorsSatoshi Tomimatsu, Kaoru Umemura, Yuichi Madokoro, Yoshimi Kawanami, Yasunori Doi
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Abstract
A system for analyzing a semiconductor device, including: a first specimen fabricating apparatus including: a vacuum chamber in which a sample substrate is placed, an ion beam irradiating optical system for forming a specimen on the sample substrate, a specimen holder to mount the specimen, and a probe for removing the specimen from the sample substrate; a second specimen fabricating apparatus, and an analyzer to analyze the specimen, wherein said first specimen fabrication apparatus has a function to separate the specimen mounted on the specimen holder and the probe in a vacuum condition.
Claims11
A system for analyzing a semiconductor device, comprising:
- a first specimen fabricating apparatus including:
- a vacuum chamber in which a sample substrate is placed, an ion beam irradiating optical system for forming a specimen on the sample substrate, a specimen holder to mount the specimen, and a probe for removing the specimen from the sample substrate,
- a second specimen fabricating apparatus, and
- an analyzer to analyze the specimen,
- wherein said first specimen fabrication apparatus has a function to separate the specimen mounted on the specimen holder and the probe in a vacuum condition.
A system for analyzing a semiconductor device, comprising:
- a first ion beam apparatus including:
- a sample stage to mount a sample substrate,
- a vacuum chamber in which the sample stage is placed,
- an ion beam irradiating optical system to irradiate the sample substrate,
- a specimen holder that accommodates a plurality of specimens separated from the sample substrate by the irradiation of the ion beam,
- transferring means to extract the separated specimen from the sample substrate, and to transfer the separated specimen to the specimen holder,
- a second ion beam apparatus that carries out a finishing process to the specimen, and
- an analyzer to analyze the finished specimen,
- wherein said first ion beam apparatus separates the specimen and the transferring means in a vacuum condition.
A method for analyzing a semiconductor device, comprising:
- forming a specimen from a sample substrate placed inside a vacuum chamber of a first specimen fabricating apparatus, by an irradiation with an ion beam,
- moving a specimen from the sample substrate to a probe,
- mounting the specimen on a specimen holder placed in the vacuum chamber,
- separating the specimen and the probe inside the vacuum chamber,
- conveying the specimen into a second specimen fabricating apparatus,
- finishing the specimen, and
- conveying the finished specimen into analyzer.
Dependencies are inferred from the claim text.