Technique for boron implantation
AssigneeVarian Semiconductor Equipment Associates, Inc.
InventorsVikram Singh, Edmund J. Winder, Harold M. Persing, Timothy Jerome Miller, Ziwei Fang, Atul Gupta
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Abstract
A technique for boron implantation is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for boron implantation. The apparatus may comprise a reaction chamber. The apparatus may also comprise a source of pentaborane coupled to the reaction chamber, wherein the source is capable of supplying a substantially pure form of pentaborane into the reaction chamber. The apparatus may further comprise a power supply that is configured to energize the pentaborane in the reaction chamber sufficiently to produce a plasma discharge having boron-bearing ions.
Claims16
An apparatus for boron implantation comprising:
- a reaction chamber;
- a source of pentaborane coupled to the reaction chamber, wherein the source is capable of supplying a substantially pure form of pentaborane into the reaction chamber;
- and
- a power supply that is configured to energize the pentaborane in the reaction chamber sufficiently to produce a plasma discharge having boron-bearing ions.
A method for boron implantation comprising the steps of:
- supplying into a reaction chamber a gas comprising a substantially pure form of pentaborane;
- and
- energizing the gas sufficiently to produce a plasma discharge having boron-bearing ions.
Dependencies are inferred from the claim text.