Semiconductor cleaner comprising a reducing agent, dispersant, and phosphonic acid-based chelant
AssigneeKao Corporation
InventorsAkimitsu Sakai, Atsushi Tamura
Life of this patent
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Abstract
To provide a detergent composition which has little corrosion to a wiring material and is excellent in cleaning ability of a semiconductor substrate or semiconductor device on which the fine particles and the metal impurities are deposited. A detergent composition comprising a reducing agent, wherein the detergent composition has an oxidation-reduction potential at 25° C. of +0.2 V or less, and a pH at 25° C. of from 3 to 12; and a cleaning process of a semiconductor substrate or a semiconductor device using the detergent composition.
Claims8
A cleaning process of a semiconductor substrate or a semiconductor device comprising a step of:
- washing a semiconductor substrate or a semiconductor device with a detergent composition comprising a reducing agent, a chelating agent, and a dispersant selected from the group consisting of polyacrylic acid-sulfonic acid copolymer, naphthalenesulfonic acid-formalin condensate, and salts of organic base compounds thereof, wherein the detergent composition has an oxidation-reduction potential at 25° C. of +0.2 V or less, and a pH at 25° C. of from 3 to 12, and wherein the chelating agent is a phosphonic acid-based chelating agent, wherein
- the reducing agent is at least one compound selected from the group consisting of ammonium sulfite, ribose, glucose, saccharose and isoascorbic acid, and
- the semiconductor substrate or the semiconductor device has a line metal and the line metal is copper.
A method for preventing corrosion of a metal material, comprising a step of:
- washing a semiconductor substrate or a semiconductor device with a detergent composition comprising a reducing agent, a chelating agent, and a dispersant selected from the group consisting of polyacrylic acid-sulfonic acid copolymer, napthalenesulfonic acid-formalin condensate, and salts of organic base compounds thereof, wherein the detergent composition has an oxidation-reduction potential at 25° C. of +0.2 V or less, and a pH at 25° C. of from 3 to 12, and wherein the chelating agent is a phosphonic acid-based chelating agent, after CMP step, wherein
- the reducing agent is at least one compound selected from the group consisting of ammonium sulfite, ribose, glucose, saccharose and isoascorbic acid, and
- the semiconductor substrate or the semiconductor device has a line metal and the line metal is copper.
A cleaning process of a semiconductor substrate or a semiconductor device comprising a step of:
- washing a semiconductor substrate or a semiconductor device with a detergent composition comprising a reducing agent, a chelating agent, and a dispersant selected from the group consisting of polycarboxylic acid compounds, polysulfonic acid compounds, carboxylic acid-sulfonic acid copolymers, alkylsulfonic acid-formalin condensate, and salts of organic base compounds thereof, wherein the detergent composition has an oxidation-reduction potential at 25° C. of +0.2 V or less, and a pH at 25° C. of from 3 to 12, and wherein the chelating agent is a phosphonic acid-based chelating agent, wherein
- the reducing agent is at least one compound selected from the group consisting of ammonium sulfite, ribose, glucose, saceharose and isoascorbic acid,
- the semiconductor substrate or the semiconductor device has a line metal and the line metal is copper, and
- the phosphonic acid-based chelating agent is contained in the detergent composition in an amount of from 3.0 to 20% by weight.
A method for preventing corrosion of a metal material, comprising a step of:
- washing a semiconductor substrate or a semiconductor device with a detergent composition comprising a reducing agent, a chelating agent, and a dispersant selected from the group consisting of polycarboxylic acid compounds, polysulfonic acid compounds, carboxylic acid-sulfonic acid copolymers, alkylsulfonic acid-formalin condensate, and salts of organic base compounds thereof, wherein the detergent composition has an oxidation-reduction potential at 25° C. of +0.2 V or less, and a pH at 25° C. of from 3 to 12, and wherein the chelating agent is a phosphonic acid-based chelating agent, after CMP step, wherein
- the reducing agent is at least one compound selected from the group consisting of ammonium sulfite, ribose, glucose, saccharose and isoascorbic acid,
- the semiconductor substrate or the semiconductor device has a line metal and the line metal is copper, and
- the phosphonic acid-based chelating agent is contained in the detergent composition in an amount of from 3.0 to 20% by weight.
Dependencies are inferred from the claim text.