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US 7,396,777 B2Granted
Method of fabricating high-k dielectric layer having reduced impurity
AssigneeSamsung Electronics Co., Ltd.
InventorsHyung-Suk Jung, Jong-Ho Lee, Ha-Jin Lim, Jae-Eun Park, Yun-Seok Kim, Jong-Ho Yang
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Abstract
Methods of fabricating high-k dielectric layers having reduced impurities for use in semiconductor applications are disclosed. The methods include the steps of: forming a stacked dielectric layer having a first dielectric layer and a second dielectric layer formed on a semiconductor substrate using an ALD method, in combination with a post-treatment step performed to the stacked dielectric layer. The steps of forming the stacked dielectric layer and performing the post-treatment are repeated at least once, thereby fabricating the high-k dielectric layer.
Claims32
A method of fabricating a high-k dielectric layer comprising the sequential steps of:
- forming a stacked dielectric layer by forming a first dielectric layer of a first dielectric material on a semiconductor substrate using an atomic layer deposition (ALD) method;
- and thereafter forming a second dielectric layer of a second dielectric material on the first dielectric layer using an atomic layer deposition (ALD) method, wherein one of said first and second dielectric materials is a metal dielectric material and the other of said first and second dielectric materials is selected from the group consisting of silicon oxide and silicon oxynitride;
- and
- performing a post-treatment to the stacked dielectric layer;
- further wherein the steps of forming the stacked dielectric layer and performing the post-treatment are repeated at least once to form a high-k dielectric layer comprising at least two of said stacked and post-treated dielectric layers.
2 more elements
A method of fabricating a high-k dielectric layer comprising the sequential steps of:
- forming a stacked dielectric layer by forming a first dielectric layer of a first dielectric material on a semiconductor substrate using an atomic layer deposition (ALD) method;
- and thereafter forming a second dielectric layer of a second dielectric material on the first dielectric layer using an atomic layer deposition (ALD) method;
- and
- performing a post-treatment to the stacked dielectric layer;
- wherein the step of forming the stacked dielectric layer comprises the steps of:
- forming a metal dielectric layer as the first dielectric layer on the semiconductor substrate;
- and
- forming a silicon oxide layer or a silicon oxynitride layer as the second dielectric layer on the first dielectric layer;
- and further wherein the steps of forming the stacked dielectric layer and performing the post-treatment are repeated at least once to form a high-k dielectric layer comprising at least two of said stacked and post-treated dielectric layers.
6 more elements
A method of fabricating a high-k dielectric layer comprising the sequential steps of:
- forming a stacked dielectric layer by forming a first dielectric layer of a first dielectric material on a semiconductor substrate using an atomic layer deposition (ALD) method;
- and thereafter forming a second dielectric layer of a second dielectric material on the first dielectric layer using an atomic layer deposition (ALD) method;
- and
- performing a post-treatment to the stacked dielectric layer;
- wherein the step of forming the stacked dielectric layer comprises the steps of:
- forming a silicon oxide layer or a silicon oxynitride layer as the first dielectric layer on the semiconductor substrate;
- and
- forming a metal dielectric layer as the second dielectric layer on the first dielectric layer;
- and further wherein the steps of forming the stacked dielectric layer and performing the post-treatment are repeated at least once to form a high-k dielectric layer comprising at least two of said stacked and post-treated dielectric layers.
6 more elements
A method of fabricating a gate dielectric layer comprising the sequential steps of:
- forming a stacked dielectric layer by forming a first dielectric layer of a first dielectric material on a semiconductor substrate using an atomic layer deposition (ALD) method;
- and thereafter forming a second dielectric layer of a second dielectric material on the first dielectric layer using an ALD method, wherein one of said first and second dielectric materials is a metal dielectric material and the other of said first and second dielectric materials is selected from the group consisting of silicon oxide and silicon oxynitride;
- and
- performing a post-treatment to the stacked dielectric layer;
- further wherein the steps of forming the stacked dielectric layer and performing the post-treatment are repeated at least once to form a high-k dielectric layer comprising at least two of said stacked and post-treated dielectric layers.
2 more elements
A method of fabricating a gate dielectric layer comprising the sequential steps of:
- forming a stacked dielectric layer by forming a first dielectric layer of a first dielectric material on a semiconductor substrate using an atomic layer deposition (ALD) method;
- and thereafter forming a second dielectric layer of a second dielectric material on the first dielectric layer using an ALD method;
- and
- performing a post-treatment to the stacked dielectric layer;
- wherein the step of forming the stacked dielectric layer comprises the steps of:
- forming a metal dielectric layer as the first dielectric layer on the semiconductor substrate;
- and
- forming a silicon oxide layer or a silicon oxynitride layer as the second dielectric layer on the first dielectric layer;
- and further wherein the steps of forming the stacked dielectric layer and performing the post-treatment are repeated at least once to form a high-k dielectric layer comprising at least two of said stacked and post-treated dielectric layers.
6 more elements
A method of fabricating a gate dielectric layer comprising the sequential steps of:
- forming a stacked dielectric layer by forming a first dielectric layer of a first dielectric material on a semiconductor substrate using an atomic layer deposition (ALD) method;
- and thereafter forming a second dielectric layer of a second dielectric material on the first dielectric layer using an ALD method;
- and
- performing a post-treatment to the stacked dielectric layer;
- wherein the step of forming the stacked dielectric layer comprises the steps of:
- forming a silicon oxide layer or a silicon oxynitride layer as the first dielectric layer on the semiconductor substrate;
- and
- forming a metal dielectric layer as the second dielectric layer on the first dielectric layer;
- and further wherein the steps of forming the stacked dielectric layer and performing the post-treatment are repeated at least once to form a high-k dielectric layer comprising at least two of said stacked and post-treated dielectric layers.
6 more elements
Dependencies are inferred from the claim text.