Back to results
US 7,396,774 B2Granted
Methods for forming an enriched metal oxide surface
AssigneeMicron Technology, Inc.
InventorsStephen W. Russell, Max Hineman
Life of this patent
Estimating the term…
Abstract
Methods of forming a metal oxide surface that is enriched with metal oxide in its higher oxidation state are provided. A metal oxide surface that is enriched with metal oxide in its higher oxidation state is also provided.
Claims35
A method of forming a metal oxide surface that is enriched with metal oxide in its higher oxidation state comprising:
- providing a metal layer;
- oxidizing said metal layer to form a metal oxide surface, wherein the metal oxide surface comprises metal oxide in a first oxidation state;
- reducing the metal oxide surface, wherein the reduced metal oxide surface comprises metal oxide in a first oxidation state and metal atom;
- and
- oxidizing the reduced metal oxide surface to form a metal oxide surface that is enriched with metal oxide in its higher oxidation state, wherein the enriched metal oxide surface comprises metal oxide in a first oxidation state and metal oxide in a second oxidation state, and wherein the metal comprises at least two oxidation states.
2 more elements
A method of forming a metal oxide surface that is enriched with metal oxide in its higher oxidation state comprising:
- providing a metal layer;
- oxidizing said metal layer to form a metal oxide surface, wherein the metal oxide surface comprises metal oxide in a first oxidation state, and wherein oxidizing the metal layer comprises:
- flowing an oxidizing gas mixture comprising at least one oxygen containing gas into the plasma processing chamber;
- striking a plasma in the plasma processing chamber from the oxidizing gas mixture to form an oxidizing plasma;
- and utilizing the oxidizing plasma to oxidize the metal layer;
- reducing the metal oxide surface, wherein the reduced metal oxide comprises metal oxide in a first oxidation state and metal atom, and wherein reducing the metal oxide surface comprises:
- flowing a reducing gas mixture comprising at least one hydrogen containing gas and at least one inert gas into the plasma processing chamber;
- striking a plasma in the plasma processing chamber from the reducing gas mixture to form a reducing plasma;
- and utilizing the reducing plasma to reduce the metal oxide surface;
- and
- oxidizing the reduced metal oxide surface to form a metal oxide surface that is enriched with metal oxide in its higher oxidation state, wherein the enriched metal oxide surface comprises metal oxide in a first oxidation state and metal oxide in a second oxidation state, and wherein oxidizing the metal oxide surface comprises:
- flowing an oxidizing gas mixture comprising at least one oxygen containing gas into the plasma processing chamber;
- striking a plasma in the plasma processing chamber from the oxidizing gas mixture to form an oxidizing plasma;
- and utilizing the oxidizing plasma to oxidize the reduced metal oxide surface, and wherein the metal comprises at least two oxidation states.
11 more elements
A method of forming a metal oxide surface that is enriched with metal oxide in its higher oxidation state comprising:
- providing a metal layer;
- oxidizing said metal layer to form a metal oxide surface comprising metal oxide in a first oxidation state, wherein oxidizing the metal layer comprises:
- flowing an oxidizing gas mixture comprising at least one oxygen containing gas and at least one inert gas into the plasma processing chamber;
- striking a plasma in the plasma processing chamber from the oxidizing gas mixture to form an oxidizing plasma;
- and utilizing the oxidizing plasma to oxidize the metal layer;
- reducing the metal oxide surface, wherein the reduced metal oxide surface comprises metal oxide in a first oxidation state and metal atom, and wherein reducing the metal oxide surface comprises:
- flowing a reducing gas mixture comprising at least one hydrogen containing gas and at least one inert gas into the plasma processing chamber;
- striking a plasma in the plasma processing chamber from the reducing gas mixture to form a reducing plasma;
- and utilizing the reducing plasma to reduce the metal oxide surface;
- and
- oxidizing the reduced metal oxide surface to form a metal oxide surface that is enriched with metal oxide in its higher oxidation state, wherein the enriched metal oxide surface comprises metal oxide in a first oxidation state and metal oxide in a second oxidation state, wherein oxidizing the second metal oxide surface comprises:
- flowing an oxidizing gas mixture comprising at least one oxygen containing gas and at least one inert gas into the plasma processing chamber;
- striking a plasma in the plasma processing chamber from the oxidizing gas mixture to form an oxidizing plasma;
- and utilizing the oxidizing plasma to oxidize the reduced metal oxide surface;
- wherein the metal comprises at least two oxidation states.
12 more elements
A method of limiting oxygen diffusion and penetration into a metal layer comprising:
- providing a metal layer;
- exposing said metal layer to oxygen to create a metal oxide surface comprising metal oxide in a first oxidation state;
- reducing the metal oxide surface, wherein the reduced metal oxide surface comprises metal oxide in a first oxidation state and metal atom;
- and
- oxidizing the reduced metal oxide surface to form a metal oxide surface that is enriched with metal oxide in its higher oxidation state, wherein the enriched metal oxide surface comprises metal oxide in a first oxidation state and metal oxide in a second oxidation state, and wherein the metal comprises at least two oxidation states.
2 more elements
A method of limiting metal loss in a metal layer comprising:
- providing a metal layer;
- exposing the metal layer to oxygen to create a metal oxide surface comprising metal oxide in a first oxidation state;
- reducing the metal oxide surface, wherein the reduced metal oxide surface comprises metal oxide in a first oxidation state and metal atom, and wherein reducing the first metal oxide surface comprises:
- flowing a reducing gas mixture comprising at least one hydrogen containing gas and at least one inert gas into the plasma processing chamber;
- striking a plasma in the plasma processing chamber from the reducing gas mixture to form a reducing plasma;
- and utilizing the reducing plasma to reduce the metal oxide surface;
- and
- oxidizing the reduced metal oxide surface to form a metal oxide surface that is enriched with metal oxide in its higher oxidation state, wherein the enriched metal oxide surface comprises metal oxide in a first oxidation state and metal oxide in a second oxidation state, wherein oxidizing the metal oxide surface comprises:
- flowing an oxidizing gas mixture comprising at least one oxygen containing gas into the plasma processing chamber;
- striking a plasma in the plasma processing chamber from the oxidizing gas mixture to form an oxidizing plasma;
- and utilizing the oxidizing plasma to oxidize the reduced metal oxide surface, and wherein the metal comprises at least two oxidation states.
8 more elements
A method of forming a copper oxide surface that is enriched with copper oxide in its higher oxidation state comprising:
- providing a copper layer;
- oxidizing said copper layer to form a copper oxide surface comprising copper oxide in a first oxidation state;
- reducing the copper oxide surface, wherein the reduced copper oxide surface comprises copper oxide in a first oxidation state and copper atom;
- and
- oxidizing the reduced copper oxide surface to form a copper oxide surface that is enriched with copper oxide in its higher oxidation state, wherein the enriched copper oxide surface comprises copper oxide in a first oxidation state and copper oxide in a second oxidation state.
2 more elements
A method of forming a copper oxide surface that is enriched with copper oxide in its higher oxidation state comprising:
- providing a copper layer;
- oxidizing the copper layer to form a copper oxide surface comprising copper oxide in a first oxidation state, wherein oxidizing the copper layer comprises:
- flowing an oxidizing gas mixture comprising at least one oxygen containing gas into the plasma processing chamber;
- striking a plasma in the plasma processing chamber from the oxidizing gas mixture to form an oxidizing plasma;
- and utilizing the oxidizing plasma to oxidize the copper layer;
- reducing the copper oxide surface, wherein the reduced copper oxide surface comprises copper oxide in a first oxidation state and copper ion, and wherein reducing the copper oxide surface comprises:
- flowing a reducing gas mixture comprising at least one hydrogen containing gas and at least one inert gas into the plasma processing chamber;
- striking a plasma in the plasma processing chamber from the reducing gas mixture to form a reducing plasma;
- and utilizing the reducing plasma to reduce the copper oxide surface;
- and
- oxidizing the reduced copper oxide surface to form a copper oxide surface that is enriched with copper oxide in its higher oxidation state, wherein the enriched copper oxide surface comprises copper oxide in a first oxidation state and copper oxide in a second oxidation state, and wherein oxidizing the second copper oxide surface comprises:
- flowing an oxidizing gas mixture comprising at least one oxygen containing gas into the plasma processing chamber;
- striking a plasma in the plasma processing chamber from the oxidizing gas mixture to form an oxidizing plasma;
- and utilizing the oxidizing plasma to oxidize the reduced copper oxide surface.
11 more elements
A method of forming a copper oxide surface that is enriched with copper oxide in its higher oxidation state comprising:
- providing a copper layer;
- oxidizing the copper layer to form a copper oxide surface comprising copper oxide in a first oxidation state, wherein oxidizing the copper layer comprises:
- flowing an oxidizing gas mixture comprising at least one oxygen containing gas and at least one inert gas into the plasma processing chamber;
- striking a plasma in the plasma processing chamber from the oxidizing gas mixture to form an oxidizing plasma;
- and utilizing the oxidizing plasma to oxidize the copper layer;
- reducing the copper oxide surface, wherein the reduced copper oxide surface comprises copper oxide in a first oxidation state and copper ion, wherein reducing the copper oxide surface comprises:
- flowing a reducing gas mixture comprising at least one hydrogen containing gas and at least one inert gas into the plasma processing chamber;
- striking a plasma in the plasma processing chamber from the reducing gas mixture to form a reducing plasma;
- and utilizing the reducing plasma to reduce the copper oxide surface;
- and
- oxidizing the reduced copper oxide surface to form a copper oxide surface that is enriched with copper oxide in its higher oxidation state, wherein the enriched copper oxide surface comprises copper oxide in a first oxidation state and copper oxide in a second oxidation state, wherein oxidizing the second copper oxide surface comprises:
- flowing an oxidizing gas mixture comprising at least one oxygen containing gas and at least one inert gas into the plasma processing chamber;
- striking a plasma in the plasma processing chamber from the oxidizing gas mixture to form an oxidizing plasma;
- and
- utilizing the oxidizing plasma to oxidize the reduced copper oxide surface.
12 more elements
A method of forming a metal oxide surface that is enriched with metal oxide in a higher oxidation state comprising:
- providing a metal layer with metal oxide surface, wherein the metal oxide surface comprises metal oxide in a first oxidation state;
- reducing the metal oxide surface layer, wherein the reduced metal oxide surface layer comprises metal oxide in a first oxidation state and metal atom;
- and
- oxidizing the reduced metal oxide surface to form a metal oxide surface that is enriched with metal oxide in its higher oxidation state, wherein the enriched metal oxide surface comprises metal oxide in a first oxidation state and metal oxide in a second oxidation state;
- wherein the metal comprises at least two oxidation states.
2 more elements
A method of forming a copper oxide surface that is enriched with copper oxide in a higher oxidation state comprising:
- providing a copper layer with copper oxide surface, wherein the copper oxide surface comprises copper oxide in a first oxidation state;
- and
- reducing the copper oxide surface layer, wherein the reduced copper oxide surface layer comprises copper oxide in a first oxidation state and copper atom;
- and
- oxidizing the reduced copper oxide surface to form a copper oxide surface that is enriched with copper oxide in its higher oxidation state, wherein the enriched copper oxide surface comprises copper oxide in a first oxidation state and copper oxide in a second oxidation state.
2 more elements
Dependencies are inferred from the claim text.