Interconnect structures with linear repair layers and methods for forming such interconnection structures
AssigneeInternational Business Machines Corporation
InventorsLouis Lu-Chen Hsu, Jack Allan Mandelman, William Robert Tonti, Chih-Chao Yang
Life of this patent
Estimating the term…
Abstract
Interconnect structures that include a conformal liner repair layer bridging breaches in a liner formed on roughened dielectric material in an insulating layer and methods of forming such interconnect structures. The conformal liner repair layer is formed of a conductive material, such as a cobalt-containing material. The conformal liner repair layer may be particularly useful for repairing discontinuities in a conductive liner disposed on roughened dielectric material bordering the trenches and vias of damascene interconnect structures.
Claims27
An interconnect structure formed on a substrate, comprising:
- an insulating layer of a dielectric material overlying the substrate;
- a trench having sidewalls extending partially through the insulating layer and a bottom that opens on a roughened portion of the dielectric material;
- a conductive line disposed in the trench;
- a liner layer disposed on the bottom of the trench and between the insulating layer and the conductive line, the liner layer including a plurality of discontinuities distributed across the roughened portion of the dielectric layer;
- and
- a conformal liner repair layer of a conductive material bridging the discontinuities in the liner layer.
An interconnect structure formed on a substrate, comprising:
- a first insulating layer of a first dielectric material overlying the substrate;
- a second insulating layer of a second dielectric material separated from the substrate by the first insulating layer;
- a first conductive line in the first insulating layer;
- a via having a bottom and a sidewall extending through the second insulating layer to the bottom, the bottom of the via overlapping a portion of the first conductive line and a roughened portion of the first dielectric material of the first insulating layer adjacent to the first conductive line;
- a conductive contact disposed in the via, the contact electrically coupled with the first conductive line;
- a liner layer on the bottom of the via between the portion of the first insulating layer and the contact, the liner layer including a plurality of discontinuities distributed across the roughened portion of the first dielectric material;
- and
- a conformal liner repair layer of a conductive material bridging the discontinuities in the liner layer.
A method of forming an interconnect structure on a substrate, comprising:
- forming a trench having sidewalls extending partially through a first insulating layer of a dielectric material overlying the substrate and a bottom that opens on a roughened portion of the dielectric material of the first insulating layer;
- at least partially covering the bottom of the trench with a first liner layer having a plurality of discontinuities that expose the dielectric material of the first insulating layer;
- conformally forming a liner repair layer that bridges the discontinuities in the first liner layer;
- and
- forming a first conductive line in the trench that is separated from the dielectric material of the first insulating layer at the bottom of the trench by at least the conformal liner repair layer.
A method of forming an interconnect structure on a substrate, comprising:
- forming a first insulating layer of a dielectric material overlying the substrate and a conductive line in the dielectric material of the first insulating layer;
- depositing a second insulating layer of a dielectric material overlying the substrate;
- forming a trench in the second insulating layer having sidewalls extending partially through the second insulating layer and a bottom that opens on the dielectric material of the second insulating layer;
- forming a via having via sidewalls extending from the bottom of the trench to a via bottom partially exposing the conductive line and partially exposing a roughened portion of the first insulating layer adjacent to the conductive line;
- at least partially covering the via bottom with a first liner layer having a plurality of discontinuities that expose the dielectric material of the first insulating layer;
- conformally forming a liner repair layer of a cobalt-containing material that bridges the discontinuities in the first liner layer;
- and
- forming a first conductive contact in the via that is separated from the dielectric material of the first insulating layer at the bottom of the via by at least the conformal liner repair layer.
Dependencies are inferred from the claim text.